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首页> 外文会议>Symposium on Covalently Bonded Disordered Thin-Film Materials held December 2-4, 1997, Boston, Massachusetts, U.S.A. >Cesium-enhanced R. F. magnetron deposition of carbon nitride and diamond-like carbon films
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Cesium-enhanced R. F. magnetron deposition of carbon nitride and diamond-like carbon films

机译：氮化碳和类金刚石碳膜的铯增强射频磁控管沉积

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摘要

We report the design, manufacturing, and testing of a new cesium enhanced negative carbon ion source that can be useful to synthesize hard and/or electron emitting carbon nitride and diamond-like carbon (DLC) thin films. The design of the source includes a conventional magnetron-sputtering gun, low voltage ion extraction lenses, and a cesium oven to provide cesium vapor for formation of a fractional monolayer of Cs on the carbon target. Cs reduces the surface work function of the carbon target and enhances the emission of negative carbon ions. Argon and argon-nitrogen gas mixtures were used to ignite and sustain the plasma in the chamber. We compare the properties of carbon nitride and DLC films deposited with and without cesium. Nitrogen composition in the Ar-N_2 gas mixture was observed to be an important process parameter affecting mechanical properties of the film. The effect of the Cs oven temperature on deposition rate and current absorbed at the substrate was also investigated for RF powers from 0 to 150 W.
机译：我们报告了一种新的铯增强负碳离子源的设计，制造和测试，该碳源可用于合成硬和/或电子发射氮化碳和类金刚石碳（DLC）薄膜。离子源的设计包括常规的磁控溅射枪，低压离子提取透镜和铯炉，以提供铯蒸气以在碳靶上形成Cs的分数单层。 Cs降低了碳靶的表面功函数，并增强了负碳离子的发射。使用氩气和氩气-氮气混合物点燃并维持室内的等离子体。我们比较了有和没有铯沉积的氮化碳和DLC膜的性能。观察到Ar-N_2气体混合物中的氮成分是影响薄膜机械性能的重要工艺参数。还针对0至150 W的RF功率研究了Cs烘箱温度对沉积速率和在基板上吸收的电流的影响。

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