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首页> 外文会议>Symposium on Electronics on Unconventional Substrates―Electrotextiles and Giant-Area Flexible Circuits Dec 2-3, 2002 Boston, Massachusetts, U.S.A. >Amorphous Silicon Thin Film Transistors on Kapton Fibers
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Amorphous Silicon Thin Film Transistors on Kapton Fibers

机译：Kapton纤维上的非晶硅薄膜晶体管

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摘要

The textile industry uses weaving to create very large quantities of fabric very quickly. The goal of our research is to use this well established technology to create complex large-area circuits quickly and efficiently. In our laboratory we have previously shown that amorphous silicon (a-Si) can be used to make thin-Film transistors (TFTs) on Kapton (a highly temperature-resistant polyirnide from DuPont). We also previously showed that these TFTs can survive mechanical loads. A process has been designed to make "TFT fibers" by fabricating a-Si TFTs on Kapton. A special TFT geometry has also been developed. The structure consists of 3 large gold contact pads ― one for each terminal of the TFT ― running along the fiber. These contact pads allow connections to be made between TFT fibers using conductor fibers Kapton fibers coated only with gold. The TFT fabrication process is based on a low temperature (150℃) Plasma Enhanced Chemical Vapor Deposition (PECVD) process. The TFTs are fabricated on a Kapton sheet from which flat fibers are made by the slit film technique. So far the best method for cutting a Kapton sheet into fibers has been plasma etching. We will describe the electronic characteristics of these TFTs as well as the electrical characteristics of the contacts between TFT fibers.
机译：纺织工业使用编织法非常快速地创建大量织物。我们研究的目标是使用这种完善的技术来快速有效地创建复杂的大面积电路。在我们的实验室中，我们以前已经证明了非晶硅（a-Si）可用于在Kapton（杜邦公司的一种耐高温聚酰亚胺）上制造薄膜晶体管（TFT）。先前我们还表明，这些TFT可以承受机械负载。设计了一种通过在Kapton上制造a-Si TFT来制造“ TFT纤维”的工艺。还开发了特殊的TFT几何形状。该结构由3个大的金接触垫组成-沿着光纤分布-每个TFT端子-一个。这些接触垫允许使用仅涂有金的导体纤维Kapton纤维在TFT纤维之间建立连接。 TFT制造工艺基于低温（150℃）等离子体增强化学气相沉积（PECVD）工艺。将TFT制造在Kapton片上，通过狭缝膜技术由其制成扁平纤维。迄今为止，将Kapton薄片切割成纤维的最佳方法是等离子蚀刻。我们将描述这些TFT的电子特性以及TFT纤维之间的触点的电气特性。

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