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首页> 外文会议>Symposium on Electronics on Unconventional Substrates―Electrotextiles and Giant-Area Flexible Circuits Dec 2-3, 2002 Boston, Massachusetts, U.S.A. >Low-Voltage Organic Thin Film Transistors on Flexible Plastic Substrates with Anodized Ta_2O_5 Gate Insulators
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Low-Voltage Organic Thin Film Transistors on Flexible Plastic Substrates with Anodized Ta_2O_5 Gate Insulators

机译：具有阳极氧化Ta_2O_5栅极绝缘体的柔性塑料基板上的低压有机薄膜晶体管

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摘要

Organic thin film transistors (OTFTs) that operate at low voltage were fabricated using a tantalum oxide (Ta_2O_5) gate insulator on plastic substrates. The Ta_2O_5 insulator was prepared by anodizing a Ta gate electrode. The high dielectric constant of the Ta_2O_5 enabled the OTFTs to operate at a lower voltage than those of previous devices. The OTFTs exhibited a high field-effect mobility of 0.35 - 0.51 cm~2/Vs, and a current on/off ratio of 10~5 -10~6 at gate voltages of less than 5 V. The threshold voltage of -1.1 V and the subthreshold slope of 0.2 V/decade were the best among those reported to date. We also demonstrated operation of a phosphorescent organic light-emitting device (OLED) with the OTFT operating at a low voltage.
机译：使用氧化钽（Ta_2O_5）栅绝缘体在塑料基板上制造了低压工作的有机薄膜晶体管（OTFT）。通过对Ta栅电极进行阳极氧化来制备Ta_2O_5绝缘体。 Ta_2O_5的高介电常数使OTFT可以在比以前的器件更低的电压下运行。 OTFT在低于5 V的栅极电压下表现出0.35-0.51 cm〜2 / Vs的高场效应迁移率，并且电流开/关比为10〜5 -10〜6。阈值电压为-1.1 V迄今为止，亚阈值斜率为0.2 V /十倍频是最好的。我们还演示了磷光有机发光器件（OLED）的运行，其中OTFT在低压下运行。

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