An Organic FET structure for unconventional substrates

机译：用于非常规衬底的有机FET结构

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A structure for organic TFTs suitable for being transferred on unusual substrates is described in each technological step. The proposed device consists in a "bottom-structure" assembled on a flexible and transparent insulating layer, without any substrate, with source and drain contacts on one side and the gate on the opposite side. The main advantage is to avoid the substrate because the insulator itself is able to support the whole structure. For this reason, application to any kind of substrates after the built-in process is possible.

机译：在每个工艺步骤中都描述了适用于在不寻常基板上转移的有机TFT的结构。所提出的装置包括组装在柔性透明绝缘层上的“底部结构”，该绝缘层没有任何基板，在一侧上具有源极和漏极触点，而在另一侧上具有栅极。主要优点是避免使用基板，因为绝缘体本身能够支撑整个结构。因此，可以在内置工艺之后将其应用于任何种类的基板。

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《Symposium on Electronics on Unconventional Substrates―Electrotextiles and Giant-Area Flexible Circuits Dec 2-3, 2002 Boston, Massachusetts, U.S.A.》|2002年|p.171-175|共5页
会议地点 Boston MA(US);Boston MA(US)
作者
Annalisa Bonfiglio; Fulvia Mameli; Ornella Sanna; Laurence Lutsen;
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INFM -Dept. of Electrical and Electronic Engineering, University of Cagliari, Piazza d'Armi, 09123 Cagliari, Italy;

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原文格式 PDF
正文语种 eng
中图分类一般工业技术;
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An Organic FET structure for unconventional substrates

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