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首页> 外文会议>Symposium on Epitaxial Oxide Thin Films III March 31-April 2, 1997, San Francisco, California,U.S.A >Mechanism of oxygenation of YBaCuO thin films during in situ growth by cathodic sputering: thermodynamic and kinetic aspects
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Mechanism of oxygenation of YBaCuO thin films during in situ growth by cathodic sputering: thermodynamic and kinetic aspects

机译：阴极溅射原位生长过程中YBCO薄膜的氧合作用机理：热力学和动力学方面

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摘要

The recent experimental results obtained for c-axis oriented YBaCuO thin films deposited at the optimized conditions for the microwave applications are presented and discussed. The emphasis is on the study of the relationship between oxygen profiles, crystallographic structure and electrical and physical properties of the films formed in situ at the same and optimized conditions of sample deposition and furthe submitted to the different conditions of sample cooling. The studies of the oxygen depth concentration profiles and of the oxygen contents are carried out using the recently developed Nuclear Reaction Analysis (NRA). These results are correlated,on one hand, with the measurements of the atomic composition and structure by RBS,XRD and TEM and, on the other hand, by the measurements of the electrical and physical properties Tc,Jc and microwave surface resistance Rs. All results are consistent with the idea that the fully oxygenated films are formed during in situ growth at T approx 700 deg C. For T<300 deg C, the oxygen interface transfer coefficient is very small and the oxygen content is practically preserved. However a large room temperature oxidation (corrosion like) takes place in the presnece of water vapor. The fundamental and applied consequences of these findings for the mechanism of thin films growth and for the properties of the films in the presence of cathodic plasma or laser plume are analysed.
机译：介绍并讨论了在最佳微波条件下沉积的c轴取向YBaCuO薄膜的最新实验结果。重点是研究在相同和最佳的样品沉积条件下，并在不同的样品冷却条件下，原位形成的薄膜的氧分布，晶体结构与电和物理性能之间的关系。使用最近开发的核反应分析（NRA）进行氧深度浓度分布图和氧含量的研究。这些结果一方面与通过RBS，XRD和TEM对原子组成和结构的测量相关，另一方面与通过电学和物理性能Tc，Jc以及微波表面电阻Rs的测量相关。所有结果均与在约700℃的T原位生长过程中形成完全氧化的膜的想法相符。对于T <300℃，氧界面转移系数非常小，并且实际上保留了氧含量。但是，在水蒸气的存在下会发生较大的室温氧化（类似腐蚀）。分析了这些发现对于薄膜生长机理和在阴极等离子体或激光羽流存在下薄膜性能的基本和应用后果。

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