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首页> 外文会议>Symposium on Epitaxial Oxide Thin Films III March 31-April 2, 1997, San Francisco, California,U.S.A >Defect generation and evolution in the hydrothermal growth of epitaxial BaTiO_3 thin films
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Defect generation and evolution in the hydrothermal growth of epitaxial BaTiO_3 thin films

机译：外延BaTiO_3薄膜水热生长中的缺陷产生与演化。

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摘要

The structure of epitaxial BaTiO_3 thin films prepared by hydrothermal synthesis on (001) SrTiO-3 substrates was studied by transimission electron microscopy (TEM). The growth evolution was follwed from initial island formation, through island impingement and fusion.Plan view and cross-section imaging demonstrated that the films grew by an unusual islanding mechanism. Electron diffraction showed the islands and the fully formed film are single crystal with mosaic character and in all cases strain relaxed. Cross-section TEM of the early growth films showed a several monolayer thick interfacial layer and the film/substrate region had no misfit dislocations. In the fully formed films, this interfacial layer was not observed, however, a clear misfit dislocation network was observed. Defects analysis shows that the misfit dislocations have pure edge character with <100> line directions. and <010> Burgers vectors (parallel to the film/substrate interface).
机译：通过透射电子显微镜（TEM）研究了在（001）SrTiO-3衬底上水热合成制备的外延BaTiO_3薄膜的结构。从最初的岛形成到岛撞击和融合，其生长演化过程都遵循着。平面图和截面成像表明，薄膜是通过不寻常的岛化机制生长的。电子衍射表明，岛和完全形成的膜是具有镶嵌特性的单晶，并且在所有情况下应变都松弛。早期生长膜的横截面TEM显示出几个单层厚的界面层，并且膜/基底区域没有错配位错。在完全形成的膜中，未观察到该界面层，但是，观察到明显的失配位错网络。缺陷分析表明，错配位错在<100>线方向上具有纯边缘特征。和<010> Burgers向量（平行于胶片/底物界面）。

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