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Structural characterization of SrBi_2Ta_2O_9 thin films

机译:SrBi_2Ta_2O_9薄膜的结构表征

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摘要

Thin films of SrBi_2Ta_2O_9 (SBT) were deposited on Si using Sol-Gel technique. the thicknesses of the films are 200 nm (A) and 400 nm (B), respectively. SEM studies show isolated grains in both SBT films with a grain size distribution between 0.1 and 0.5 um . However, most of the grain size in the film is smaller than 0.1 um . EDX analysis indicates that the films are inhomgeneous. FTIR external reflectivity measurements of the samples show bands around 1260, 936(for SBT2), 955 (for SBT4), 770, 600 cm~-1. Micro raman spectra shows inhomogeneities in the SBT films. Bands corresponding to the SBT materials were found, but frequency shifts and broadening were observed in almost every band. Particularly, the band around 818 cm~-1 octahedron, the A_1g mode was found to be approximately 163 cm~-1. This change seems to be related to the Ta_O bond length.
机译:使用Sol-Gel技术将SrBi_2Ta_2O_9(SBT)薄膜沉积在Si上。膜的厚度分别为200 nm(A)和400 nm(B)。 SEM研究表明,两种SBT薄膜的晶粒均在0.1至0.5 um之间。然而,膜中的大多数晶粒尺寸小于0.1μm。 EDX分析表明这些膜是不均匀的。样品的FTIR外部反射率测量显示在1260、936(对于SBT2),955(对于SBT4),770、600 cm-1左右。显微拉曼光谱显示出SBT膜中的不均匀性。发现了对应于SBT材料的频带,但是几乎在每个频带中都观察到了频移和展宽。特别地,发现在818 cm-1八面体附近的带,A_1g模式约为163 cm-1。这种变化似乎与Ta_O键长度有关。

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