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首页> 外文会议>Symposium on Epitaxial Oxide Thin Films III March 31-April 2, 1997, San Francisco, California,U.S.A >Preparation of epitaxial and olycrystalline La_0.8Sr_0.2MnO_3 films by dipping-pyrolysis process
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Preparation of epitaxial and olycrystalline La_0.8Sr_0.2MnO_3 films by dipping-pyrolysis process

机译：浸渍热解法制备外延和晶体La_0.8Sr_0.2MnO_3薄膜

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摘要

The films of La_0.8Sr_0.2MnO_3 (LSMO) were prepared on single-crystal SrTiO_3(100) and polycrystalline yttria-stabilized zirconia (YSZ) substrates by dipping-pyrolysis process using metal naphthenates as starting materials. The crystallinity, grain alignment, morphology and electric properties of the films were compared. Epitaxial films were found to grow on SrTiO_3, heat-treated at 1200 deg C, by x-ray diffraction, and to exhibit very smooth surfaces by SEM and AFM observations. on the other hand, the surfaces of ther polycrystalline films grown on YSZ consisted of round-shaped LSMO grains. The resistivity of the epitaxial films was about two orders of magnitude lower than that of the polycrystalline films prepared under the same conditions. Preparation of epitaxial LSMO films on SrTiO_3(110) is also presented.
机译：以金属环烷酸盐为原料，通过浸渍-热解法在单晶SrTiO_3（100）和多晶氧化钇稳定的氧化锆（YSZ）衬底上制备了La_0.8Sr_0.2MnO_3（LSMO）薄膜。比较了薄膜的结晶度，晶粒取向，形态和电性能。发现外延膜在SrTiO_3上生长，并通过X射线衍射在1200摄氏度下热处理，并且通过SEM和AFM观察显示出非常光滑的表面。另一方面，在YSZ上生长的多晶膜的表面由圆形LSMO晶粒组成。外延膜的电阻率比在相同条件下制备的多晶膜的电阻率低大约两个数量级。还介绍了在SrTiO_3（110）上制备外延LSMO薄膜的方法。

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