Growth of Epitaxial Al_2O_3 Films on Silicon by Ionized Beam Deposition

机译：离子束沉积在硅上生长外延Al_2O_3薄膜

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Epitaxial A1_2O_3 films have been successfully grown on an oxidized silicon substrate by the ionized beam deposition using an Al ion beam in oxygen environments. The crystalline quality dependence of the Al_2O_3 films on the growth temperatures was investigated. Using in situ reflection high energy electron diffraction, the orientation relationships between epitaxial A1_2O_3 films and Si substrate were found to be (100) A1_2O_3//(100) Si with [110] A1_2O_3//[110] Si and (111) A1_2O_3//(111) Si with [112] A1_2O_3//[11 2] Si. The stoichiometry of the films was found to be similar to that of sapphire from XPS measurements.

机译：通过在氧气环境中使用Al离子束进行离子束沉积，在氧化硅衬底上成功地生长了外延Al_2_2_O_3膜。研究了Al_2O_3薄膜的晶体质量对生长温度的依赖性。使用原位反射高能电子衍射，发现外延A1_2O_3薄膜与Si衬底之间的取向关系为（100）A1_2O_3 //（100）Si与[110] A1_2O_3 // [110] Si和（111）A1_2O_3 / /（111）Si与[112] Al1_2O_3 // [11 2] Si。通过XPS测量发现膜的化学计量与蓝宝石的化学计量相似。

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《Symposium on Growth, Evolution and Properties of Surfaces, Thin Films and Self-Organized Structures, Nov 27-Dec 1, 2000, Boston, Massachusetts, U.S.A.》|2000年|p.6.3.1-6.3.6|共6页
会议地点 Boston MA(US);Boston MA(US)
作者
SangWoo Whangbo; YunKi Choi; Kwun Bum Chung; HongKyu Jang; ChungNam Whang;
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作者单位

Atomic-scale Surface Science Research Center and Institute of Physics and Applied Physics, Yonsei University, Seoul, 120-749, Korea;

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原文格式 PDF
正文语种 eng
中图分类无线电电子学、电信技术;
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4. Growth of Epitaxial Al_2O_3 Films on Silicon by Ionized Beam Deposition [C] . ChungNam Whang, HongKyu Jang, Kwun Bum Chung, MRS Meeting . 2001

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Growth of Epitaxial Al_2O_3 Films on Silicon by Ionized Beam Deposition

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