Epitaxial mist chemical vapor deposition growth and characterization of Cu_3N films on (0001)α-Al_2O_3 substrates

Yamaguchi Tomohiro; Nagai Hiroki; Kiguchi Takanori; Wakabayashi Nao; Igawa Takuto; Hitora Toshimi; Onuma Takeyoshi; Honda Tohru; Sato Mitsunobu

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Epitaxial mist chemical vapor deposition growth and characterization of Cu_3N films on (0001)α-Al_2O_3 substrates

机译：外延雾化学气相沉积生长和Cu_3N膜的表征（0001）α-Al_2O_3基板

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Epitaxial growth of Cu3N films on (0001)alpha-Al(2)O(3)substrates was performed by mist chemical vapor deposition. As a source solution, 0.10 mol l(-1)of copper (II) acetylacetonate dissolved in 28% aqueous ammonia was used. Even though an aqueous solution was used as the source solution, the epitaxial Cu3N film was realized without the incorporation of CuO and Cu2O phases in the growth of 300 degrees C. The film was also found to have limited O incorporation from the results of scanning transmission electron microscopy and Rutherford back-scattering spectroscopy. The optical property of the Cu3N film was also investigated.

机译：通过雾化学气相沉积进行（0001）α-Al（2）O（3）底碱基上的Cu3N膜的外延生长。作为源溶液，使用0.10mol L（-1）烷基（II）乙酰丙酮溶解在28％氨水中。即使使用水溶液作为源溶液，也实现了外延Cu3N膜，而不掺入CuO和Cu2O相的生长中的300℃。还发现该薄膜的掺入扫描变速器的结果有限电子显微镜和Rutherford背散射光谱。还研究了Cu3N膜的光学性质。

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来源
《Annales de l'I.H.P》 |2020年第7期|075505.1-075505.5|共5页
作者
Yamaguchi Tomohiro; Nagai Hiroki; Kiguchi Takanori; Wakabayashi Nao; Igawa Takuto; Hitora Toshimi; Onuma Takeyoshi; Honda Tohru; Sato Mitsunobu;
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作者单位

Kogakuin Univ Sch Adv Engn Dept Appl Phys Hachioji Tokyo 1920015 Japan|Kogakuin Univ Grad Sch Engn Dept Elect Engn & Elect Tokyo 1920015 Japan;

Kogakuin Univ Sch Adv Engn Dept Appl Phys Hachioji Tokyo 1920015 Japan|Kogakuin Univ Grad Sch Engn Dept Elect Engn & Elect Tokyo 1920015 Japan;

Tohoku Univ Inst Mat Res Sendai Miyagi 9808577 Japan;

Kogakuin Univ Grad Sch Engn Dept Elect Engn & Elect Tokyo 1920015 Japan;

FLOSFIA INC Kyodai Katsura Venture Plaza Kyoto 6158245 Japan;

FLOSFIA INC Kyodai Katsura Venture Plaza Kyoto 6158245 Japan;

Kogakuin Univ Sch Adv Engn Dept Appl Phys Hachioji Tokyo 1920015 Japan|Kogakuin Univ Grad Sch Engn Dept Elect Engn & Elect Tokyo 1920015 Japan;

Kogakuin Univ Sch Adv Engn Dept Appl Phys Hachioji Tokyo 1920015 Japan|Kogakuin Univ Grad Sch Engn Dept Elect Engn & Elect Tokyo 1920015 Japan;

Kogakuin Univ Sch Adv Engn Dept Appl Phys Hachioji Tokyo 1920015 Japan|Kogakuin Univ Grad Sch Engn Dept Elect Engn & Elect Tokyo 1920015 Japan;

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原文格式 PDF
正文语种 eng
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关键词
Cu3N; mist CVD; epitaxial growth;

机译：CU3N;雾气CVD;外延生长;

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1. Epitaxial growth of gamma-(AlxGa1-x)(2)O-3 alloy thin films on spinel substrates via mist chemical vapor deposition [J] . Horie Ryuto, Nishinaka Hiroyuki, Tahara Daisuke, Journal of Alloys and Compounds: An Interdisciplinary Journal of Materials Science and Solid-state Chemistry and Physics . 2021,第1期

机译：通过雾化学气相沉积在尖晶石基板上的γ-（AlxGa1-x）（2）O-3合金薄膜的外延生长
2. Epitaxial growth of alpha-Ga2O3 thin films on a-, m-, and r-plane sapphire substrates by mist chemical vapor deposition using alpha-Fe2O3 buffer layers [J] . Nishinaka Hiroyuki, Tahara Daisuke, Morimoto Shota, Materials Letters . 2017,第octa15期

机译：使用α-Fe2O3缓冲层通过薄雾化学气相沉积法在a，m和r面蓝宝石衬底上外延生长α-Ga2O3薄膜
3. Impact of hydrochloric acid on the epitaxial growth of In_2O_3 films on (0001 )α-Al_2O_3 substrates by mist CVD [J] . Yamaguchi Tomohiro, Takahashi Subaru, Kiguchi Takanori, Annales de l'I.H.P . 2020,第7期

机译：盐酸对（0001）α-AL_2O_3薄雾CVD对in_2O_3膜外延生长的影响
4. Epitaxial Growth of 4H-SiC on (0001) C-face Substrates by Cold-Wall and Hot-Wall Chemical Vapor Deposition [C] . Rene A. Stein, Bernd Thomas, Christian Hecht European Conference on Silicon Carbide and Related Materials . 2007

机译：冷壁和热壁化学气相沉积（0001）C面基板的4H-SiC的外延生长
5. Preparation and characterization of thin, atomically clean gallium nitride(0001) and aluminum nitride(0001) films and the deposition of thick gallium nitride films via iodine vapor phase growth. [D] . Mecouch, William J. 2005

机译：原子清洁的氮化镓（0001）和氮化铝（0001）薄膜的制备，表征以及通过碘汽相生长沉积厚的氮化镓薄膜。
6. Influence of Carrier Gases on the Quality of Epitaxial Corundum-Structured α-Ga2O3 Films Grown by Mist Chemical Vapor Deposition Method [O] . Yu Xu, Chunfu Zhang, Yaolin Cheng, 2019

机译：载气对薄雾化学气相沉积法生长刚玉结构外延刚玉结构α-Ga2O3薄膜质量的影响
7. Epitaxial growth of undoped and Li-doped NiO thin films on α-Al2O3 substrates by mist chemical vapor deposition [O] . Takumi Ikenoue, Junki Inoue, Masao Miyake, 2019

机译：通过雾化学气相沉积在α-Al2O3基材上的未掺杂和锂掺杂NiO薄膜的外延生长
8. Substrate effects on the structure and optical properties of epitaxial PbTiO(sub 3) thin films prepared by metal-organic chemical vapor deposition [R] . Foster, C. M., Li, Z., Bai, G. R., 1994

机译：衬底对金属有机化学气相沉积制备的外延pbTiO（sub 3）薄膜的结构和光学性质的影响

Epitaxial mist chemical vapor deposition growth and characterization of Cu_3N films on (0001)α-Al_2O_3 substrates

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