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首页> 外文学位 >Preparation and characterization of thin, atomically clean gallium nitride(0001) and aluminum nitride(0001) films and the deposition of thick gallium nitride films via iodine vapor phase growth.
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Preparation and characterization of thin, atomically clean gallium nitride(0001) and aluminum nitride(0001) films and the deposition of thick gallium nitride films via iodine vapor phase growth.

机译：原子清洁的氮化镓（0001）和氮化铝（0001）薄膜的制备，表征以及通过碘汽相生长沉积厚的氮化镓薄膜。

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摘要

The research conducted for this dissertation involved two tasks important to the achievement of (1) improved interfaces in future III-nitride devices and (2) GaN substrates for homoepitaxial growth of III-nitride films and material device structures. The initial phase of this work determined an effective technique for the removal of oxygen and hydrocarbon contamination from GaN(0001) and AlN(0001) surfaces. Through the combined use of several surface evaluation techniques, a chemical vapor treatment with ammonia in a UHV environment was developed. The optimal conditions for GaN were 860°C for 15 minutes at 10-4 Torr, and for AlN were 1120°C for 30 minutes at 10-4 Torr. The surface microstructures of each material were undamaged, and important electrical and optical properties of the treated surfaces were determined. The technique was adapted to clean the surface of a GaN thin film substrate prior to homoepitaxial growth via metal-organic vapor phase epitaxy (MOVPE). Introducing ammonia into the gas mixture during heating resulted in reduction of the contamination at the interface between the substrate and a subsequently grown GaN film.; Rapid growth of thick GaN films was achieved via the reaction between gallium iodide species and ammonia on various substrates. The iodine and gallium transport rates in the custom reactor were lower than expected from thermodynamic equilibrium calculations due to high gas flow rate relative to the volume of the iodine and gallium sources. The gallium transport remained a function of the iodine flow rate, and the growth rate was a function of the amount of gallium delivered to the seed. The maximum growth rate achieved was 155 mum/hr for 1 hour. Cracking was observed in all films grown via IVPG, even when the substrate was changed from sapphire to SIC. Use of a gold layer as an in-situ mask did not reduce the cracking when the GaN was deposited over the gold layer.
机译：本论文进行的研究涉及两个重要任务，这些任务对于实现（1）未来III型氮化物器件的改进界面和（2）用于III型氮化物膜同质外延生长的GaN衬底和材料器件结构至关重要。这项工作的初始阶段确定了一种从GaN（0001）和AlN（0001）表面去除氧气和碳氢化合物污染的有效技术。通过结合使用几种表面评估技术，开发了在特高压环境中用氨进行化学气相处理的技术。 GaN的最佳条件是在10-4 Torr下为860°C 15分钟，AlN在10-4 Torr下为1120°C 30分钟。每种材料的表面微观结构均未受损，并且确定了处理过的表面的重要电学和光学性质。该技术适用于在通过金属有机气相外延（MOVPE）进行同质外延生长之前清洁GaN薄膜衬底的表面。在加热期间将氨引入到气体混合物中，从而减少了衬底与随后生长的GaN膜之间的界面处的污染。通过碘化镓物质与氨在各种衬底上的反应，可以快速生长厚的GaN薄膜。由于相对于碘和镓源的体积的高气体流速，定制反应器中的碘和镓的传输速率低于热力学平衡计算的预期。镓的运输仍然是碘流速的函数，生长速率是传递到种子的镓量的函数。 1小时内达到的最大生长速率为155毫米/小时。即使将衬底从蓝宝石更改为SIC，在通过IVPG生长的所有薄膜中都观察到了裂纹。当在金层上沉积GaN时，使用金层作为原位掩膜并不能减少裂纹。

著录项

  • 作者

    Mecouch, William J.;

  • 作者单位

    North Carolina State University.;

  • 授予单位 North Carolina State University.;
  • 学科 Engineering Materials Science.
  • 学位 Ph.D.
  • 年度 2005
  • 页码 253 p.
  • 总页数 253
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类 工程材料学;
  • 关键词

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