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首页> 外文会议>Symposium on Growth, Evolution and Properties of Surfaces, Thin Films and Self-Organized Structures, Nov 27-Dec 1, 2000, Boston, Massachusetts, U.S.A. >Surface Morphology of SiGe Epitaxial Layers Grown on Uniquely Oriented Si Substrates
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Surface Morphology of SiGe Epitaxial Layers Grown on Uniquely Oriented Si Substrates

机译：在独特取向的Si衬底上生长的SiGe外延层的表面形态

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摘要

The 4% lattice mismatch between Si and Ge creates strain in epitaxial layers of SiGe alloys on Si, and this strain can manifest itself in the morphological structure of the surface of the epitaxial layer. This study explores the relationship of the evolution of the surface morphology of SiGe layers grown on a range of Si surface orientations. We have grown thin, strained and thick, relaxed layers of Si_(0.7)Ge_(0.3) by solid source molecular beam epitaxy on substrates with surface normals rotated from [001] towards [111] by angles of θ = (0, 2, 4, 10, 22) degrees. The surface morphology was investigated by atomic force microscopy, which showed considerable ordering of surface features on relaxed samples. These features evolve from hut-like structures at 0 degrees to large mesa-like structures separated by pits and crevices at 22 degrees. The organization of these features is also shown to vary with the substrate orientation. Each surface has characteristic directions along which features are aligned, and these directions vary continuously with the angle of rotation of the substrate. Transmission electron microscopy confirmed that misfit dislocations had formed along those same directions. The state of relaxation of each layer is quantified by Raman spectroscopy in order to make a direct correlation between residual strain and surface morphology.
机译：Si和Ge之间的4％晶格失配在Si上的SiGe合金的外延层中产生应变，并且该应变可以在外延层的表面的形态结构中显现出来。这项研究探索了在一系列Si表面取向上生长的SiGe层表面形态演变的关系。我们通过在表面法线从[001]向[111]旋转了θ=（0，2的角度）的衬底上进行固体源分子束外延生长，形成了Si_（0.7）Ge_（0.3）的薄，应变和厚，松弛的Si_（0.7）Ge_（0.3）层。 4、10、22）度。通过原子力显微镜研究了表面形态，其在松弛样品上显示出相当大的表面特征排序。这些特征从0度的小屋状结构演变为由22度的凹坑和缝隙隔开的大型台面状结构。这些特征的组织也显示为随基底取向而变化。每个表面具有特征对准的特征方向，并且这些方向随着基板的旋转角度连续变化。透射电子显微镜证实，沿着那些相同的方向形成了失配位错。通过拉曼光谱法定量每一层的松弛状态，以使残余应变与表面形态直接相关。

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