Effect of the sign of misfit strain on the formation of a dislocation structure in SiGe epitaxial layers grown on Si and Ge substrates

Vdovin VI; Milvidskii MG; Yugova TG

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Effect of the sign of misfit strain on the formation of a dislocation structure in SiGe epitaxial layers grown on Si and Ge substrates

机译：失配应变的符号对在Si和Ge衬底上生长的SiGe外延层中位错结构形成的影响

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Comparative analysis of the specific features of the formation of a dislocation structure in the single-layer epitaxial heterostructures Si1-xGex/Si and Ge1-ySiy/Ge is performed. It is ascertained that, at a relatively low lattice mismatch between an epitaxial layer an a substrate, the sign of misfit strain at the interface significantly affects the processes of defect formation. The most probable reasons for the observed phenomena are analyzed with allowance for the specific features of the state of the ensemble of intrinsic point defects in epitaxial layers subjected to elastic strains of a different sign. (C) 2005 Pleiades Publishing, Inc.

机译：对单层外延异质结构Si1-xGex / Si和Ge1-ySiy / Ge中位错结构形成的特定特征进行了比较分析。可以确定的是，在外延层和衬底之间的晶格失配较低的情况下，界面处的失配应变的迹象显着影响缺陷形成的过程。分析了观察到的现象的最可能原因，并考虑了经受不同符号弹性应变的外延层中本征点缺陷整体状态的特定特征。（C）2005年Pleiades Publishing，Inc.

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《Crystallography reports》 |2005年第5期|共5页
作者
Vdovin VI; Milvidskii MG; Yugova TG;
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正文语种 eng
中图分类晶体学;
关键词
GEXSI1-X/SI(100) HETEROSTRUCTURES; SI1-XGEX/SI HETEROSTRUCTURES; DEFECT FORMATION; RELAXATION; GENERATION; KINETICS; GLIDE;

机译：GEXSI1-X / SI（100）异质结构;SI1-XGEX / SI异质结构;缺陷形成;松弛;生成;动力学;滑行;

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1. Effect of the sign of misfit strain on the formation of a dislocation structure in SiGe epitaxial layers grown on Si and Ge substrates [J] . Vdovin VI, Milvidskii MG, Yugova TG Crystallography reports . 2005,第5期

机译：失配应变的符号对在Si和Ge衬底上生长的SiGe外延层中位错结构形成的影响
2. Misfit strain relaxation by dislocations in InAs islands and layers epitaxially grown on (001)GaAs substrates by MOVPE [J] . Wagner G. Crystal Research and Technology: Journal of Experimental and Industrial Crystallography . 1998,第5期

机译：通过MOVPE在（001）GaAs衬底上外延生长的InAs岛和层中的位错错配松弛
3. Growth and characterization of strain-relaxed SiGe buffer layers on Si(001) substrates with pure-edge misfit dislocations [J] . Taoka N, Sakai A, Egawa T, Materials science in semiconductor processing . 2005,第1a3期

机译：具有纯边缘失配位错的Si（001）衬底上松弛应变的SiGe缓冲层的生长和表征
4. Strain Relaxation by Misfit Dislocations in Nanoscale Epitaxial Ferroelectric BaTiO3 Films Grown on SrTiO3 Substrate [C] . H. P. Sun, W. Tian, J. H. Haeni, Microscopy Society of America annual meeting . 2002

机译：通过在SRTIO3底物上生长的纳米级外延铁电BATIO3薄膜中的错位脱位应变松弛
5. Misfit dislocation formation in silicon(1-x) germanium(x) strained layers grown by Limited Reaction Processing [D] . Noble, David Bill. 1991

机译：通过有限反应处理在硅（1-x）锗（x）应变层中形成错配位错
6. Alloying and Strain Relaxation in SiGe Islands Grown on Pit-Patterned Si(001) Substrates Probed by Nanotomography [O] . F Pezzoli, T Merdzhanova, A Rastelli, 2009

机译：纳米断层扫描技术在坑式Si（001）衬底上生长的SiGe岛中的合金化和应变松弛
7. Self-Arranged Misfit Dislocation Network Formation upon Strain Release in La0.7Sr0.3MnO3/LaAlO3(100) Epitaxial Films under Compressive Strain [O] . Santiso, José, Bagués, Núria, Frontera Beccaria, Carlos, 2017

机译：La0.7Sr0.3MnO3 / LaAlO3（100）外延膜在压缩应变下释放应力后自排错失配网络的形成

Effect of the sign of misfit strain on the formation of a dislocation structure in SiGe epitaxial layers grown on Si and Ge substrates

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