首页> 外国专利> Low defect relaxed SiGe/strained Si structures on implant anneal buffer/strain relaxed buffer layers with epitaxial rare earth oxide interlayers and methods to fabricate same

Low defect relaxed SiGe/strained Si structures on implant anneal buffer/strain relaxed buffer layers with epitaxial rare earth oxide interlayers and methods to fabricate same

机译：具有外延稀土氧化物中间层的植入物退火缓冲层/应变松弛缓冲层上的低缺陷松弛SiGe /应变Si结构及其制造方法

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摘要

A method provides a substrate having a top surface; forming a first semiconductor layer on the top surface, the first semiconductor layer having a first unit cell geometry; epitaxially depositing a layer of a metal-containing oxide on the first semiconductor layer, the layer of metal-containing oxide having a second unit cell geometry that differs from the first unit cell geometry; ion implanting the first semiconductor layer through the layer of metal-containing oxide; annealing the ion implanted first semiconductor layer; and forming a second semiconductor layer on the layer of metal-containing oxide, the second semiconductor layer having the first unit cell geometry. The layer of metal-containing oxide functions to inhibit propagation of misfit dislocations from the first semiconductor layer into the second semiconductor layer. A structure formed by the method is also disclosed.

机译：一种方法，提供了具有顶表面的基板;在顶表面上形成第一半导体层，该第一半导体层具有第一晶胞几何形状;在第一半导体层上外延沉积含金属的氧化物层，该含金属的氧化物层具有不同于第一单位晶胞几何形状的第二单位晶胞几何形状;通过含金属的氧化物层离子注入第一半导体层;对离子注入的第一半导体层进行退火;在含金属的氧化物层上形成第二半导体层，该第二半导体层具有第一晶胞几何形状。含金属的氧化物层起到抑制失配位错从第一半导体层向第二半导体层的传播的作用。还公开了通过该方法形成的结构。

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公开/公告号US9613803B2

专利类型
公开/公告日2017-04-04

原文格式PDF
申请/专利权人 INTERNATIONAL BUSINESS MACHINES CORPORATION;
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申请/专利号US201514700568
发明设计人 ALEXANDER REZNICEK;
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申请日2015-04-30
分类号H01L29/76;H01L29/94;H01L21/02;H01L29/10;H01L29/161;H01L29/167;H01L21/265;H01L21/324;H01L29/165;H01L29/32;H01L29/04;
国家 US
入库时间 2022-08-21 13:41:35

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