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首页> 外文会议>Symposium on Growth, Evolution and Properties of Surfaces, Thin Films and Self-Organized Structures, Nov 27-Dec 1, 2000, Boston, Massachusetts, U.S.A. >Surface Evolution of NiTi and NiTiHf Thin Films
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Surface Evolution of NiTi and NiTiHf Thin Films

机译：NiTi和NiTiHf薄膜的表面演变

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摘要

The microstructure evolution of Ti-rich NiTi thin films and (TiHf)-rich NiTiHf thin films containing 9at% Hf was investigated. These films were deposited from single NiTi and NiTiHf targets using a DC magnetron sputtering system. Free-standing films were obtained by using single crystal silicon substrates. The thickness of these films was controlled between 10-12 um. In this investigation, the effects of deposition temperature on the surface and cross-sectional microstructures of these films were studied. Substrate temperature during deposition was varied between 300℃ to 700℃ at 100℃ intervals. The influence of post deposition heat treatment (HT) temperature on the microstructure of these films was also studied. The post deposition HT temperature was varied between 300℃ and 800℃ at 100℃ intervals. Both surface and cross-sectional microstructures were examined using a scanning electron microscope (SEM). The crystallinity and the phases present were determined using x-ray diffractometry. All the as-deposited films were found to be crystalline, even when the substrate temperature was as low as 300℃. Results from the microstructure analysis show that all the films have a relatively fine grain size ranging from 0.2 μm to 2.5 μm, and the grain size increases with increasing substrate deposition temperature. The effect of post deposition HT on grain size was found to be minimal.
机译：研究了富Ti的NiTi薄膜和含9at％Hf的富（TiHf）的NiTiHf薄膜的微观结构演变。使用直流磁控溅射系统从单个NiTi和NiTiHf靶沉积这些膜。通过使用单晶硅衬底获得自支撑膜。这些膜的厚度控制在10-12um之间。在这项研究中，研究了沉积温度对这些膜的表面和横截面微观结构的影响。沉积期间的基板温度以100℃的间隔在300℃至700℃之间变化。还研究了沉积后热处理（HT）温度对这些膜的微观结构的影响。沉积后的HT温度以100℃的间隔在300℃至800℃之间变化。使用扫描电子显微镜（SEM）检查了表面和横截面的微观结构。使用X射线衍射法测定存在的结晶度和相。即使在基板温度低至300℃的情况下，也发现所有沉积的膜都是结晶的。微观结构分析的结果表明，所有薄膜的晶粒尺寸都相对较细，范围为0.2μm至2.5μm，并且晶粒尺寸随基材沉积温度的升高而增加。发现沉积后HT对晶粒尺寸的影响是最小的。

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