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首页> 外文会议>Symposium on Growth, Evolution and Properties of Surfaces, Thin Films and Self-Organized Structures, Nov 27-Dec 1, 2000, Boston, Massachusetts, U.S.A. >Electromigration in Epitaxial Copper Lines
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Electromigration in Epitaxial Copper Lines

机译：外延铜线中的电迁移

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摘要

Copper is becoming the metal of choice for interconnect applications in integrated circuits due to its lower electrical resistivity and higher electromigration (EM) resistance. The effects of grain size, preferred orientation, and interfacial layers, on electromigration in Cu lines are, however, not yet well understood. In this paper, we compare the EM characteristics of epitaxial Cu(l 11) lines with that of polycrystalline lines with a (111) texture. We also investigate the effects of Ta, TaN and TiN interfacial underlayers and Cu crystal quality on the EM response of epitaxial Cu(00l) lines. EM tests were carried out on 2-μm-wide Cu lines at a constant current density between 0.02 and 3.5 MA/cm~2 in an Ar ambient at 300℃. Our results indicate that EM resistance of both (111) and (001) epitaxial lines have a higher mean time to failure (MTTF) than polycrystalline Cu lines. The presence of a TiN or TaN interfacial layer increases the MTTF in Cu(00l) films, while a Ta underlayer degrades EM resistance. X-ray diffractograms indicating a smaller full-width-at-half-maximum of Cu(00l) films on nitride underlayers suggest that lower defect densities in these Cu films is the likely reason for improved EM resistance. Both (111) and (100) orientations fail by formation of faceted voids.
机译：铜由于其较低的电阻率和较高的电迁移（EM）电阻而成为集成电路互连应用的首选金属。然而，对于Cu线中的电迁移，晶粒尺寸，优选的取向和界面层的影响尚不清楚。在本文中，我们比较了外延Cu（l 11）线和具有（111）织构的多晶线的EM特性。我们还研究了Ta，TaN和TiN界面底层以及Cu晶体质量对外延Cu（00l）线的EM响应的影响。在300℃的Ar环境中，在2μm宽的Cu线上以0.02至3.5 MA / cm〜2的恒定电流密度进行EM测试。我们的结果表明（111）和（001）外延线的EM电阻均比多晶Cu线具有更高的平均失效时间（MTTF）。 TiN或TaN界面层的存在会增加Cu（00l）薄膜的MTTF，而Ta底层会降低EM电阻。 X射线衍射图表明，氮化物底层上的Cu（00l）膜的半峰全宽较小，这表明这些Cu膜中较低的缺陷密度是提高EM电阻的可能原因。 （111）和（100）取向都因形成多面空隙而失败。

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