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Electromigration study of copper lines on steps prepared by a plasma-based etch process

机译：铜线在基于等离子蚀刻工艺的步骤上的电迁移研究

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摘要

The electromigration phenomenon of the copper line etched with a plasma-based process over the SiNx step has been investigated. Two important factors, i.e., the dielectric topography and the stress temperature, were examined using the accelerated isothermal electromigration method. The activation energy of 0.73 eV to 0.89 eV indicates two possible mass transport pathways: interfacial and copper surface diffusions. The copper line on the SiNx step has a shorter lifetime and a smaller activation energy than the copper line on the flat surface has. For the former, voids were formed at the cusp region and perpendicular to the current flow direction. For the latter, voids were formed in series and parallel to the current flow direction. The “neck” structure at the cusp region, which is a result of the inappropriate etching condition, further decreased the lifetime and the activation energy. The lifetime of the “neck-free” copper line over the SiNx step was estimated to be 7.1 × 109 s under the high-speed IC operation condition. The thermal stress mismatch between the copper layer and TiW barrier layer as well as the underneath dielectric layer facilitated the void formation. The step effect on the lifetime was reduced when the test temperature was high because of the change of the local stress. In summary, the topography and the test temperature are critical factors for the copper line’s lifetime.
机译：已经研究了在SiNx步骤上用基于等离子体的工艺蚀刻的铜线的电迁移现象。使用加速等温电迁移方法检查了两个重要因素，即介电形貌和应力温度。 0.73 eV至0.89 eV的活化能表明两种可能的质量传递途径：界面和铜表面扩散。与平坦表面上的铜线相比，SiNx步骤上的铜线具有较短的寿命和较小的活化能。对于前者，在尖端区域形成垂直于电流流动方向的空隙。对于后者，空隙是与电流流动方向串联并平行形成的。由于蚀刻条件不适当而导致的尖端区域的“颈部”结构进一步降低了寿命和活化能。在高速IC操作条件下，经过SiNx步骤的“无颈”铜线的寿命估计为7.1×10 9 s。铜层和TiW势垒层以及下面的介电层之间的热应力失配促进了空隙的形成。当测试温度较高时，由于局部应力的变化，降低了对寿命的阶跃效应。总之，形貌和测试温度是影响铜线寿命的关键因素。

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  • 来源
    《Journal of Applied Physics》 |2012年第6期|p.1-6|共6页
  • 作者

    Lin Chi-Chou; Kuo Yue;

  • 作者单位

    Texas A&M University, Thin Film Nano & Microelectronics Research Laboratory, College Station, Texas 77843-3122, USA;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
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  • 正文语种 eng
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