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Process effects of copper film over a step etched with a plasma-based process

机译：铜膜在等离子蚀刻工艺中的工艺效果

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摘要

The additive gas effect of a new plasma-based process for etching the copper film over a dielectric step has been investigated. The addition of different gases, such as Ar, N_2, and CF_4, affected the copper vertical and lateral conversion rates, which are critical to the attack of the cusp region and the sidewall as well as the residue formation. This is due to changes of plasma phase chemistry and ion bombardment energy. Excessive attacks of the cusp region and the sidewall were observed when the chlorine radical concentration was high except for the short plasma exposure time or the sidewall passivation condition. When the slope angle of the dielectric step was small, the cusp structure of the copper film was barely visible; therefore, the excessive plasma attack of the cusp region was negligible. A two step etch process that minimizes excessive attacks of the cusp region and the sidewall as well as the residue formation has been developed. This new process is critical to the practical application of copper in microelectronic products.
机译：已经研究了一种新的基于等离子体的工艺在介电步骤上蚀刻铜膜的附加气体效应。添加诸如Ar，N_2和CF_4之类的不同气体会影响铜的垂直和横向转化率，这对于尖角区域和侧壁的侵蚀以及残留物的形成至关重要。这是由于等离子体相化学和离子轰击能量的变化。当氯自由基浓度高时，除了短的等离子体暴露时间或侧壁钝化条件外，观察到尖瓣区域和侧壁的过度侵蚀。当介电台阶的倾斜角较小时，几乎看不到铜膜的尖峰结构；反之，因此，尖部区域的过度血浆侵蚀可忽略不计。已经开发出一种两步蚀刻工艺，该工艺可以最大程度地减小尖头区域和侧壁的过度侵蚀以及残留物的形成。这一新工艺对于微电子产品中铜的实际应用至关重要。

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  • 来源
    《Journal of Vacuum Science & Technology》 |2012年第2期|p.021204.1-021204.9|共9页
  • 作者

    Chi-Chou Lin; Yue Kuo;

  • 作者单位

    Texas A&M University, Thin Film Nano & Microelectronics Research Laboratory, College Station, Texas 77843-3122;

    Texas A&M University, Thin Film Nano & Microelectronics Research Laboratory, College Station, Texas 77843-3122;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
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  • 正文语种 eng
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