A new, room-temperature, high-rate plasma-based copper etch process

Kuo Y; Lee S

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A new, room-temperature, high-rate plasma-based copper etch process

机译：一种新的，室温，高速率等离子基铜蚀刻工艺

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摘要

A new plasma-based copper etch process that operated at room temperature using a conventional parallel-plate electrode design is discussed. In this paper, authors review the reaction mechanism and compare process parameters, such as gas type, pressure, and power, affecting the plasma-copper reaction rate and the edge profile of the etched pattern. Small geometry copper patterns, e.g., less than 0.8 mum, are successfully etched with this new method. This new process is applicable to many nano and microelectronic devices. (C) 2004 Elsevier Ltd. All rights reserved.

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《Vacuum: Technology Applications & Ion Physics: The International Journal & Abstracting Service for Vacuum Science & Technology》 |2004年第4期|共5页
作者
Kuo Y; Lee S;
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正文语种 eng
中图分类真空技术的应用;
关键词
copper; plasma etch; plasma etch of copper; reactive ion etch;

机译：铜;等离子刻蚀;铜的等离子刻蚀;反应离子刻蚀;

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1. A new, room-temperature, high-rate plasma-based copper etch process [J] . Kuo Y, Lee S Vacuum: Technology Applications & Ion Physics: The International Journal & Abstracting Service for Vacuum Science & Technology . 2004,第3a4期

机译：一种新的，室温，高速率等离子基铜蚀刻工艺
2. Electromigration study of copper lines on steps prepared by a plasma-based etch process [J] . Lin Chi-Chou, Kuo Yue Journal of Applied Physics . 2012,第6期

机译：铜线在基于等离子蚀刻工艺的步骤上的电迁移研究
3. Electromigration study of copper lines on steps prepared by a plasma-based etch process [J] . Chi-Chou Lin, Yue Kuo Journal of Applied Physics . 2012,第6期

机译：铜线在基于等离子蚀刻工艺的步骤上的电迁移研究
4. A NOVEL ROOM-TEMPERATURE PLASMA-BASED COPPER ETCHING PROCESS FOR VLSI [C] . Yue Kuo, Sangheon Lee International VLSI multilevel interconnection conference;VMIC . 2000

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7. Process and reliability assessment of plasma-based copper etch process [O] . Liu Guojun 2009

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8. Controlling Fundamentals in High-Energy High-Rate Pulsed Power Materials Processing of Powdered Tungsten, Titanium Aluminides, and Copper-Graphite Composites. [R] . Persad, C., Marcus, H. L., Bourell, D. L., 1990

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A new, room-temperature, high-rate plasma-based copper etch process

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