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Plasma-Based Process for Production of F and HF from Benign Precursors and Use of the Same in Room-Temperature Plasma Processing
Plasma-Based Process for Production of F and HF from Benign Precursors and Use of the Same in Room-Temperature Plasma Processing
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机译：基于等离子体的良性前驱体生产F和HF的工艺及其在室温等离子体处理中的使用
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摘要
Methods and apparatuses for the production of HF in an electron-beam generated plasma. A gas containing fluorine, hydrogen, and an inert gas such as argon, e.g., Ar/SF6/H2O or Ar/SF6/NH3 flows into a plasma treatment chamber to produce a low pressure gas in the chamber. An electron beam directed into the gas forms a plasma from the gas, with energy from the electron beam dissociating the F-containing molecules, which react with H-containing gas to produce HF in the plasma. Although the concentration of the gas phase HF in the plasma is a very small fraction of the total gas in the chamber, due to its highly reactive nature, the low concentration of HF produced by the method of the present invention is enough to modify the surfaces of materials, performing the same function as aqueous HF solutions to remove oxygen from an exposed material.
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机译：在电子束产生的等离子体中产生HF的方法和设备。包含氟，氢和惰性气体（例如氩气）的气体，例如Ar / SF 6 / H 2 O或Ar / SF 6 / NH 3 流入等离子体处理室，以在该室中产生低压气体。导入气体中的电子束从气体中形成等离子体，电子束中的能量使含F分子离解，含F分子与含H气体反应在等离子体中生成HF。尽管等离子体中气相HF的浓度仅占室中总气体的很小一部分，但是由于其高反应性，通过本发明的方法产生的HF的低浓度足以修饰表面材料具有与HF水溶液相同的功能，可以从暴露的材料中除去氧气。
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