首页>
外国专利>
Plasma-Based Process for Production of F and HF from Benign Precursors and Use of the Same in Room-Temperature Plasma Processing
Plasma-Based Process for Production of F and HF from Benign Precursors and Use of the Same in Room-Temperature Plasma Processing
展开▼
机译：基于等离子体的生产方法，用于生产F和HF的良性前体，并在室温等离子体加工中使用相同
展开▼
页面导航
摘要
著录项
相似文献
摘要
Methods and apparatuses for the production of HF in an electron-beam generated plasma. A gas containing fluorine, hydrogen, and an inert gas such as argon, e.g., Ar/SF6/H2O or Ar/SF6/NH3 flows into a plasma treatment chamber to produce a low pressure gas in the chamber. An electron beam directed into the gas forms a plasma from the gas, with energy from the electron beam dissociating the F-containing molecules, which react with H-containing gas to produce HF in the plasma. Although the concentration of the gas phase HF in the plasma is a very small fraction of the total gas in the chamber, due to its highly reactive nature, the low concentration of HF produced by the method of the present invention is enough to modify the surfaces of materials, performing the same function as aqueous HF solutions to remove oxygen from an exposed material.
展开▼
机译：用于在电子束产生的等离子体中生产HF的方法和设备。含氟，氢气和惰性气体的气体，例如氩气，例如Ar / Sf 6 / h 2 O或Ar / sf 6 / NH <亚> 3 流入等离子体处理室以在腔室中产生低压气体。指向气体的电子束形成来自气体的等离子体，从解离F含F分子的电子束的能量，这与含H的气体反应以在等离子体中产生HF。尽管等离子体中气相Hf的浓度是腔室中总气体的非常小的部分，但由于其高反应性，通过本发明的方法产生的低浓度的HF足以改变表面材料，用HF溶液进行相同的功能，以从暴露的材料中除去氧气。
展开▼
