AN ANALYSIS OF FLOW PROPERTIES OF CHEMICALLY VAPOR DEPOSITED BOROPHOSPHOSILICATE GLASS FILMS FOR ULSI DEVICE TECHNOLOGY

机译：用于ULSI装置技术的化学气相沉积硼硅酸盐玻璃膜的流动性分析。

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A quantitative analysis of BPSG film flow capability with isothermal furnace and rapid thermal anneal conditions has been performed. Empirical equations are presented for calculation of BPSG film flow angles on device steps and in contact holes in a wide range of dopant concentration, film step coverage, anneal temperature and anneal time. Factors, which affect gap-fill capability of BPSG films in modern ULSI device technology are analyzed.

机译：对等温炉和快速热退火条件下的BPSG膜流动能力进行了定量分析。提出了经验方程式，用于计算器件台阶上和接触孔中各种掺杂剂浓度，膜台阶覆盖率，退火温度和退火时间范围内的BPSG膜流动角。分析了影响现代ULSI器件技术中BPSG薄膜的间隙填充能力的因素。

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《Symposium on Interconnects and Contact Metallization for ULSI Oct 17-22, 1999, Honolulu, HI》|1999年|p.322-333|共12页
会议地点 Honolulu HI(US)
作者
V.Y. Vassiliev;
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作者单位

RD Department, Chartered Semiconductor Manufacturing 60 Woodlands Industrial Park D, Street 2, Singapore 738406;

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会议组织
原文格式 PDF
正文语种 eng
中图分类无线电电子学、电信技术;
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1. Interrelation between the Parameters of Chemical Vapor Deposition,Properties,and Structure of Borophosphosilicate Glass Films Used in the Silicon Integrated Circuit Technology [J] . V.Yu.Vasilev Glass Physics and Chemistry: A Journal on the Structural, Physical, and Chemical Properties and Nature of Inorganic Glasses and Glass-Forming Melts . 2003,第5期

机译：硅集成电路技术中使用的硼磷硅玻璃膜的化学气相沉积，性能和结构参数之间的相互关系
2. Borophosphosilicate Glass Films in Silicon Microelectronics, Part 1: Chemical Vapor Deposition, Composition, and Properties [J] . V. Y. Vasilev Russian Microelectronics . 2004,第5期

机译：硅微电子学中的硼磷硅酸盐玻璃膜，第1部分：化学气相沉积，组成和性能
3. Zn_(1-x)Mg_xO thin films deposited by original infrared assisted spray chemical vapor deposition: evaluation of structural, optical and electrical properties with the aim of provide Cu(In,Ga)Se_2 based photovoltaic devices [J] . V. FROGER, S. DABOS-SEIGNON, S. NO?L, Journal of optoelectronics and advanced materials . 2014,第5a6期

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4. HIGH DENSITY PLASMA CHEMICALLY VAPOR DEPOSITED PHOSPHOSILICATE GLASS FILMS FOR ULSI DEVICE APPLICATIONS [C] . V. Y. Vassiliev, J.L. Sudijono, A. Cuthbertson Symposium on Interconnects and Contact Metallization for ULSI Oct 17-22, 1999, Honolulu, HI . 1999

机译：用于ULSI装置的高密度等离子体化学气相沉积的磷化玻璃膜
5. Nanocrystalline and amorphous silicon thin film transistors deposited by microwave plasma electron cyclotron resonance chemical vapor deposition: Material analysis, device fabrication and characterization. [D] . Teng, Lihong. 2003

机译：微波等离子体电子回旋共振化学气相沉积法沉积的纳米晶和非晶硅薄膜晶体管：材料分析，器件制造和表征。
6. Interlink between Tunable Material Properties andThermoresponsiveness of Cross-Linked Poly(N-vinylcaprolactam)Thin Films Deposited by Initiated Chemical Vapor Deposition [O] . Fabian Muralter, Alberto Perrotta, Oliver Werzer, -1

机译：可调材料属性与交联聚（N-乙烯基己内酰胺）的热响应性通过化学气相沉积沉积的薄膜
7. Zn1-xMgxO thin films deposited by original infrared assisted spray chemical vapor deposition: evaluation of structural, optical and electrical properties with the aim of provide Cu(In,Ga)Se2 based photovoltaic devices [O] . V. Froger, S. Dabos, S. Noël, 2014

机译：通过原始红外辅助喷涂化学气相沉积沉积的Zn1-xmgxO薄膜：评估结构，光学和电学性质，目的是提供基于Cu（In，Ga）se2的光伏器件
8. Quantitative infrared determination of composition and properties of borophosphosilicate glass (BPSG) thin films using multivariate calibration. [R] . McGuire, J. A., Adhihetty, I. S., Niemczyk, T. M., 1991

机译：用多元校正定量红外测定硼磷硅酸盐玻璃（BpsG）薄膜的组成和性能。

AN ANALYSIS OF FLOW PROPERTIES OF CHEMICALLY VAPOR DEPOSITED BOROPHOSPHOSILICATE GLASS FILMS FOR ULSI DEVICE TECHNOLOGY

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