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首页> 外文会议>Symposium on Ion Beam Synthesis and Processing of Advanced Materials held Nov 27-29, 2000, Boston, Massachusetts, U.S.A. >Ion Beam Enhanced Formation and Luminescence of Si Nanoclusters from a-SiO_x
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Ion Beam Enhanced Formation and Luminescence of Si Nanoclusters from a-SiO_x

机译：a-SiO_x离子束增强Si纳米团簇的形成和发光

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摘要

The effect of ion beams on the formation of Si nanoclusters from a-SiO_x films and their luminescence properties is investigated. a-SiO_x films with Si content ranging from 33 to 50 at. % were deposited by Electron Cyclotron Resonance Plasma Enhanced Chemical Vapor Deposition (ECR-PECVD) of SiH_4 and O_2. Prior to anneal, some samples were implanted with 380 keV Si to a dose ranging from 5.7 X 10~(14) cm~(-2) to 5.7 X 10~(16) cm~(-2). All films were rapid thermal annealed under flowing Ar environment, and hydrogenated after anneals to passivatc defects and to enhance the luminescence of Si nanoclusters. For films with Si content less than 40 at. %, ion beam slightly reduces the photoluminescence (PL) intensity and induces a slight blueshift of the luminescence. For films with Si content greater than 40 at. %, ion beam greatly increases the PL intensity. Based on the effect of the ion beams dose and the ion specie, we propose that ion beams damage greatly promotes nucleation of small Si clusters from the a-SiO_x matrix.
机译：研究了离子束对a-SiO_x薄膜形成Si纳米团簇及其发光性能的影响。硅含量在33至50 at。之间的a-SiO_x膜。通过SiH_4和O_2的电子回旋共振等离子体增强化学气相沉积（ECR-PECVD）沉积了5％的碳。在退火之前，向一些样品注入380 keV Si，剂量范围为5.7 X 10〜（14）cm〜（-2）至5.7 X 10〜（16）cm〜（-2）。所有薄膜均在流动的Ar环境下进行快速热退火，并在退火后进行氢化以钝化缺陷并增强Si纳米团簇的发光。对于硅含量小于40 at的薄膜。 ％，离子束稍微降低了光致发光（PL）强度，并引起了发光的轻微蓝移。对于硅含量大于40 at的薄膜。 ％，离子束大大增加了PL强度。基于离子束剂量和离子种类的影响，我们认为离子束损伤极大地促进了a-SiO_x基体中小的Si团簇的形核。

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