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首页> 外文会议>Symposium on Ion Beam Synthesis and Processing of Advanced Materials held Nov 27-29, 2000, Boston, Massachusetts, U.S.A. >Crystallization of Isolated Amorphous Zones in Semiconductor Materials
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Crystallization of Isolated Amorphous Zones in Semiconductor Materials

机译：半导体材料中孤立无定形区的结晶

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摘要

Crystallization of spatially isolated amorphous zones in Si, Ge, GaP, InP and GaAs was stimulated thermally and by irradiation with electrons and photons. The amorphous zones were created by a 50 keV Xe~+ implantation. Significant thermal crystallization occurred at temperatures greater than 425 K, 375 K and 200 K in Si, Ge and GaAs, respectively. Electrons with energies between 25 and 300 keV stimulated crystallization in all materials at temperatures between 90 K and room temperature. For electron energies above the displacement threshold, the crystallization rate decreased as the electron energy decreased. As the electron energy was decreased below approximately 100 keV, the crystallization rate unexpectedly increased. The crystallization rate was independent of temperature for all electron irradiations. Irradiation with a 532 nm green laser (hv = 2.33 eV) caused crystallization in Si (E_g =1.11 eV) and Ge (E_g = 0.67 eV) at a rate comparable to a thermal anneal at 425 K and 375 K, respectively, and caused minimal crystallization in GaP (E_g = 2.26 eV). The electron and photon irradiation results arc consistent with the model that crystallization is controlled by defects (dangling bonds and kinks) created by electronic excitation at the amorphous-crystalline interface.
机译：Si，Ge，GaP，InP和GaAs中空间隔离的非晶区的结晶受到热作用以及通过电子和光子的照射而受到刺激。通过50 keV Xe〜+注入形成非晶区。在Si，Ge和GaAs中，分别在大于425 K，375 K和200 K的温度下发生明显的热结晶。能量在25到300 keV之间的电子会在90 K和室温之间的温度下刺激所有材料的结晶。对于高于位移阈值的电子能量，结晶速率随着电子能量的降低而降低。当电子能量降低到约100 keV以下时，结晶速率出乎意料地增加。对于所有电子辐射，结晶速率均与温度无关。 532 nm绿色激光（hv = 2.33 eV）的照射导致在Si（E_g = 1.11 eV）和Ge（E_g = 0.67 eV）中的结晶速率分别与425 K和375 K的热退火相当。 GaP中的最小结晶度（E_g = 2.26 eV）。电子和光子辐照的结果与该模型一致，该模型由非晶态晶体界面上的电子激发产生的缺陷（悬挂键和扭结）控制着。

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