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Ion Beam Slicing of Single Crystal Oxide Thin Films

机译:单晶氧化物薄膜的离子束切片

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Epitaxial thin film liftoff using the ion-slicing method has been applied to SrTiO_3 single crystals. Rutherford backscattering spectrometry along with channeling (RBS/C) has been used to investigate the relative disorder as a function of temperature from the samples that were irradiated by 40 KeV hydrogen ions to a fluence of 5.0 X 10~(16) H~+/cm~2. Hydrogen profiles were also measured as a function of annealing temperature to understand the role of hydrogen in the ion slicing process. Film cleavage occurred during or after annealing at 570 K, and cleaved film has been successfully transferred to a silicon substrate using ceramic adhesive.
机译:使用离子切片法的外延薄膜剥离技术已应用于SrTiO_3单晶。 Rutherford背散射光谱法与通道法(RBS / C)一起用于研究40 KeV氢离子辐照至5.0 X 10〜(16)H〜+ /的通量的相对不规则随温度的变化厘米〜2。还测量了氢剖面作为退火温度的函数,以了解氢在离子切片过程中的作用。在570 K退火期间或之后发生膜裂解,并且已使用陶瓷粘合剂将裂解的膜成功转移到硅基板上。

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