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首页> 外文会议>Symposium on Ion Beam Synthesis and Processing of Advanced Materials held Nov 27-29, 2000, Boston, Massachusetts, U.S.A. >Doping of GaN by ion implantation
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Doping of GaN by ion implantation

机译：通过离子注入对GaN进行掺杂

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摘要

In this work we report the structural and optical properties of ion implanted GaN. Potential acceptors such as Ca and Er were used as dopants. Ion implantation was carried out with the substrate at room temperature and 550℃, respectively. The lattice site location of the dopants was studied by Rutherford backscattering/channeling combined with particle induced X-ray emission. Angular scans along both [0001] and [1011] directions show that 50% of the Er ions implanted at 550 ℃ occupy substitutional or near substitutional Ga sites after annealing. For Ca we found only a fraction of 30% located in displaced Ga sites along the [0001] direction. The optical properties of the ion implanted GaN films have been studied by photoluminesccncc measurements. Er- related luminescence near 1.54 μm is observed under below band gap excitation at liquid helium temperature. The spectra of the annealed samples consist of multiline structures with the sharpest lines found in GaN until now. The green and red emissions were also observed in the Er doped samples after annealing.
机译：在这项工作中，我们报告了离子注入GaN的结构和光学性质。诸如Ca和Er的潜在受体被用作掺杂剂。分别在室温和550℃下对衬底进行离子注入。通过卢瑟福反向散射/通道结合粒子诱导的X射线发射研究了掺杂剂的晶格位置。沿[0001]和[1011]方向的角度扫描显示，退火后，在550℃注入的Er离子中有50％占据了置换Ga或接近置换Ga的位置。对于Ca，我们发现只有30％的一部分位于[0001]方向的Ga置换位点。通过光致发光测量已经研究了离子注入的GaN膜的光学性质。在液氦温度下，在带隙以下激发下，观察到接近1.54μm的Er相关发光。退火样品的光谱由多线结构组成，这些线具有迄今为止在GaN中发现的最清晰的线。退火后，在掺Er的样品中也观察到绿色和红色发射。

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