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首页> 外文会议>Symposium on Ion Beam Synthesis and Processing of Advanced Materials held Nov 27-29, 2000, Boston, Massachusetts, U.S.A. >CHEMICAL EFFECTS IN ION IMPLANTATION INDUCED QUANTUM WELL INTERMIXING
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CHEMICAL EFFECTS IN ION IMPLANTATION INDUCED QUANTUM WELL INTERMIXING

机译：离子注入诱导量子阱混合的化学作用

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摘要

Ion implantation followed by rapid thermal annealing is used to induce layer intermixing and thus selectively blue-shift the emission wavelength of TnP-based quantum well hetero-structures. The intermixing is greatly enhanced over thermal intermixing due to the supersaturation of defects. The magnitude of the observed blue-shift has been studied previously as a function of ion fluence and ion mass: the dependence on ion mass is well established, with heavier ions producing a larger shift. We show here that chemical effects can also play a significant role in determining the induced blue-shift. Data are presented from the implantation of the similar mass ions; aluminum (m～27), silicon (m～28) and phosphorus (m～31). The P-induccd blue shift displays a monotonic increase with fluence, consistent with previous studies; however, the fluence dependence of Al- and Si-induced blue-shifts both deviate significantly from the behaviour for P. These results have important implications for attempts to scale intermixing behaviour with ion mass.
机译：离子注入后进行快速热退火可用于诱导层混合，从而选择性地蓝移基于TnP的量子阱异质结构的发射波长。由于缺陷的过饱和，与热混合相比，混合得到了极大的增强。先前已经研究了观察到的蓝移的大小与离子通量和离子质量的关系：很好地建立了对离子质量的依赖性，较重的离子产生较大的漂移。我们在这里表明，化学作用也可以在确定诱导的蓝移中起重要作用。数据来自于类似质量离子的注入。铝（m〜27），硅（m〜28）和磷（m〜31）。 P诱导的蓝移随通量显示单调增加，与先前的研究一致；然而，铝和硅引起的蓝移的注量依赖性都与P的行为显着不同。这些结果对尝试扩大与离子质量的混合行为具有重要意义。

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