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首页> 外文会议>Symposium on Materials and Devices for Optoelectronics and Microphotonics, Apr 1-5, 2002, San Francisco, California >Relaxed InAsP layers grown on step graded InAsP buffers by solid source MBE
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Relaxed InAsP layers grown on step graded InAsP buffers by solid source MBE

机译：固态源MBE在逐步分级的InAsP缓冲液上生长的弛豫InAsP层

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摘要

Si-doped InAs_xP_(1-x) layers with As mole fractions ranging from 0.05 to 0.50 were grown on InAs_xP_(1-x) step-graded buffer layers on InP substrates by solid source molecular beam epitaxy. The growth parameters consisted of a P:In flux ratio of 7:1, a growth temperature of ~ 485℃, a growth rate of 2.2 A/s, and an As:In flux ratio of 0.37-2.36 for varying As mole fractions. The As mole fraction and the layer relaxation were determined using triple axis x-ray diffraction measurements. Near complete relaxation (>93%) was achieved for all Si-doped InAs_xP(1-x) epilayers. The structural morphology indicated that the InAs_xP_(1-x) graded buffer layers were effective in relieving the lattice mismatch strain as evidenced by a well-developed Crosshatch morphology and low rms surface roughness. The electron concentration, mobility, and Si donor activation energy for each InAs_xP_(1-x) composition were determined using temperature dependent Hall measurements. At a constant electron carrier concentration of ~3.5xl0~(16) cm~(13), the 300 K carrier mobility increased from 2700 to 4732 cm~2/V-sec with increasing As mole fraction from 0.05 to 0.50.
机译：通过固体源分子束外延，在InP衬底上的InAs_xP_（1-x）阶梯梯度缓冲层上生长具有0.05至0.50的As摩尔分数的Si掺杂InAs_xP_（1-x）层。生长参数包括：P：In通量比为7：1，生长温度为485℃，生长速率为2.2 A / s，As：In通量比为0.37-2.36（变化的As摩尔分数）。使用三轴X射线衍射测量确定As摩尔分数和层松弛。对于所有掺Si的InAs_xP（1-x）外延层都达到了近乎完全的弛豫（> 93％）。结构形态表明，InAs_xP_（1-x）梯度缓冲层可有效缓解晶格失配应变，这由完善的交叉阴影线形态和低均方根表面粗糙度证明。使用与温度有关的霍尔测量来确定每种InAs_xP_（1-x）组成的电子浓度，迁移率和Si供体活化能。在〜3.5x10〜（16）cm〜（13）的恒定电子载流子浓度下，随着As摩尔分数从0.05增加到0.50，300 K载流子迁移率从2700增加到4732 cm〜2 / V-sec。

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