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首页> 外文会议>Symposium on Microcrystalline and Nanocrystalline Semiconductors-1998 held November 30-December 3, 1998, Boston, Massachusetts, U.S.A. >Robust excition polariton in a quantum-well waveguide
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Robust excition polariton in a quantum-well waveguide

机译：量子阱波导中的鲁棒激振极化子

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摘要

The refractive index change of polariton propagation in a GaAs quantum-well waveguide was measured as a function of the electric field. Its temperature dependence was also measured. The experimental results showed that the refractive index change of the polariton propagation was at least three times as large as that of the conventional light propagation. This effect remains up to 40 K, and coincides with the temperature dependence of the rate of polariton scattering by phonons. We also fabricated directional-coupler-type switching devices to apply this large refractive index change, and were able to dmeonstrate the operation in a single quantum-well waveguide. Our results indicate that extremely small and low driving voltage switching devices may be feasible.
机译：测量GaAs量子阱波导中极化子传播的折射率变化与电场的关系。还测量了其温度依赖性。实验结果表明，极化子传播的折射率变化至少是常规光传播的折射率变化的三倍。该效应一直保持到40 K，并且与声子的极化子散射速率的温度相关性一致。我们还制造了定向耦合器类型的开关器件以应用这一大的折射率变化，并能够说明单个量子阱波导中的工作情况。我们的结果表明，极小和低驱动电压的开关器件是可行的。

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