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首页> 外文会议>Symposium on Microcrystalline and Nanocrystalline Semiconductors-1998 held November 30-December 3, 1998, Boston, Massachusetts, U.S.A. >Microstructure and size distribution of compound semiconductor nanocrystals synthesized by ion implantation
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Microstructure and size distribution of compound semiconductor nanocrystals synthesized by ion implantation

机译：离子注入合成的化合物半导体纳米晶体的微观结构和尺寸分布

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摘要

Ion implantation is a versatile technique by which compound semiconductor nanocrystals may be synthesized in a wide variety of host materials. The component elements that form the compound of interest are implanted sequentially into the host, and nanocrystalline precipitates then form during thermal annealing. Using this technique, we have synthesized compound semiconductor nanocrystal precipitates of ZnS, CdS, PbS, and CdSe in a fused silica matrix. The resulting microstructures and size distributions were investigated by cross-sectional transmission electron microscopy. Several unusual microstructures were observed, including a band of relatively large nanocrystals at the end of the implant profile for ZnS and CdSe, polycrystalline agglomerates of a new phase such as #gamma#-Zn_2SiO_4, and the formation of central voids inside CdS nanocrystals. While each of these microstructures is of fundamental interest, such structures are generally not desirable for potential device applications for which a uniform, monodispersed array of nanocrystals is required. Methods were investigated by which these unusual microstructures could be eliminated.
机译：离子注入是一种通用技术，通过该技术可以在多种基质材料中合成化合物半导体纳米晶体。依次将形成目标化合物的组成元素植入主体中，然后在热退火过程中形成纳米晶沉淀。使用这种技术，我们在熔融石英基体中合成了ZnS，CdS，PbS和CdSe的化合物半导体纳米晶体沉淀。通过横截面透射电子显微镜研究所得的微结构和尺寸分布。观察到几种不同寻常的微观结构，包括在ZnS和CdSe的注入轮廓结束时出现的相对较大的纳米晶体带，新相的多晶团聚体（如＃γ＃-Zn_2SiO_4）以及CdS纳米晶体内部的中心空隙的形成。尽管这些微结构中的每一个都具有基本的意义，但对于需要均匀，单分散的纳米晶体阵列的潜在装置应用而言，这种结构通常是不希望的。研究了可以消除这些异常微结构的方法。

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