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Glant anisotropy of conductivity in hydrogenated nanocrystalline silicon thin films

机译:氢化纳米晶硅薄膜电导率的格兰特各向异性

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摘要

Thin (<1000 A) hydrogenated nanocrystalline silicon films are widely used in solar cells, light emitting diodes, and spatial light modulators. In this work the conductivity of doped and undoped amorphous-nanocrystalline silicon thin films is studied as a function of film thickness: a giant anisotropy of conductivity is established. The longitudinal conductivity decreases dramatically (by a factor of 10~9-10~(10)) as the layer thickness is reduced from 1500 A to 200 A, while the transverse conductivity remains close to that of a doped a Si:H. The data obtained are interpreted in terms of the percolation theory.
机译:氢化纳米晶硅薄膜(<1000 A)被广泛用于太阳能电池,发光二极管和空间光调制器中。在这项工作中,研究了掺杂和未掺杂的非晶态纳米晶硅薄膜的电导率与膜厚的关系:建立了巨大的电导率各向异性。随着层厚度从1500 A减小到200 A,纵向电导率急剧下降(降低了10〜9-10〜(10)倍),而横向电导率则保持与掺杂的Si:H接近。根据渗流理论解释获得的数据。

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