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首页> 外文期刊>Физиκа и химия стеκла >STRUCTURAL AND CHEMICAL FEATURES OF SILICON NANOCRYSTALLITES IN NANOCRYSTALLINE HYDROGENATED SILICON THIN FILMS
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STRUCTURAL AND CHEMICAL FEATURES OF SILICON NANOCRYSTALLITES IN NANOCRYSTALLINE HYDROGENATED SILICON THIN FILMS

机译：纳米加氢硅薄膜中硅纳米晶的结构和化学特征

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摘要

Hydrogenated nanocrystalline silicon (nc-Si:H) thin films were deposited on Si wafers at room temperature by plasma enhanced chemical vapor deposition (PECVD): a mixture of SiRi and H2 was introduced into the evacuated reaction chamber. The films were post-deposition annealed at temperatures 400-1100 °C. The silicon nanocrystallites (nc-Si) in the films ranges from ~4.0 to -8.0 nm in their size, depending on the hydrogen flow rates as well as the annealing conditions. The relative fractions of the Si-H3, Si-H2, and Si-H bonds in the nc-Si:H films varied sensitively with the heat-treatment conditions. Local radial distribution function (RDF) analysis of the films was performed by using selected area electron diffraction methods. A model for the nanostructure of the nc-Si:H films was suggested to feature the variation in the size and chemical bonds of the nanocrystallites as well as the amorphous matrix.
机译：通过等离子增强化学气相沉积（PECVD），在室温下将氢化纳米晶硅（nc-Si：H）薄膜沉积在Si晶片上：将SiRi和H2的混合物引入真空反应室。将膜在400-1100℃的温度下进行后沉积退火。膜中的硅纳米晶体（nc-Si）的尺寸范围为〜4.0至-8.0 nm，具体取决于氢的流速以及退火条件。 nc-Si：H膜中Si-H3，Si-H2和Si-H键的相对分数随热处理条件而敏感地变化。膜的局部径向分布函数（RDF）分析是通过使用选定区域的电子衍射方法进行的。建议使用nc-Si：H薄膜的纳米结构模型来表征纳米微晶以及非晶基质的尺寸和化学键变化。

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