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首页> 外文会议>Symposium on Microcrystalline and Nanocrystalline Semiconductors-1998 held November 30-December 3, 1998, Boston, Massachusetts, U.S.A. >Dechannealing study of nanocrystalline Si:H layers produced by high dose hydrogen irradiation of silicon crystals
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Dechannealing study of nanocrystalline Si:H layers produced by high dose hydrogen irradiation of silicon crystals

机译：高剂量氢辐照硅晶体产生的纳米晶Si：H层的去磁研究

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摘要

A study of Si:H layers formed by high dose hydrogen implantation (up to 3x10~(17) cm~(-2)) using pulsed beams with mean currents up 40 mA/cm~2 was carried out in the present work. The Rutherford backscattering spectrometry (RBS), channeling of He ions, and transmission electron microscopy (TEM) were used to study the implanted silicon, and to identify the structural defects (a-Si islands and nanocrystallites). Implantation regimes used in this work lead to creation of the layers, which contain hydrogen concentration higher than 15 at.percent as well as the high defect concentrations. As a result, the nano- and microcavities that are created in the silicon fill with hydrogen. Annealing of this silicon removes the radiation defects and leads to a nanocrystalline structure of implanted layer. A strong energy dependence of dechanneling, connected with formation of quasi nanocrystallites, which have mutual small angle disorientation (<1.5 deg), was found after moderate annealing in the range 200-500deg C. The nanocrystalline regions are in the range of 2-4 nm were estimated on the basis of the suggested dechanneling model and transmission electron microscopy (TEM) measurements. Correlation between spectroscopic ellipsometry, visible photoluminescence, and sizes of nanocrystallites in hydrogenated nc-Si:H is observed.
机译：在目前的工作中，研究了使用平均电流高达40 mA / cm〜2的脉冲束通过高剂量氢注入（高达3x10〜（17）cm〜（-2））形成的Si：H层。卢瑟福背散射光谱法（RBS），氦离子通道和透射电子显微镜（TEM）用于研究注入的硅，并确定结构缺陷（非晶硅岛和纳米晶体）。在这项工作中使用的注入方式导致了层的产生，这些层包含高于15 at。％的氢浓度以及高的缺陷浓度。结果，在硅中产生的纳米腔和微腔充满了氢。该硅的退火去除了辐射缺陷，并导致了注入层的纳米晶体结构。在200-500°C范围内进行适度退火后，发现与沟道形成的能量依赖性强，与准纳米微晶的形成有关，它们具有相互较小的角度取向（<1.5度）。纳米晶区的范围为2-4在建议的脱沟道模型和透射电子显微镜（TEM）测量的基础上估算了nm。观察到椭圆偏振光度法，可见光致发光和氢化的nc-Si：H中纳米晶体的尺寸之间的相关性。

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