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首页> 外文会议>Symposium on Microcrystalline and Nanocrystalline Semiconductors-1998 held November 30-December 3, 1998, Boston, Massachusetts, U.S.A. >Chemical Solution Deposited Copper-doped CdSe Quantum Dot Films
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Chemical Solution Deposited Copper-doped CdSe Quantum Dot Films

机译：化学溶液沉积铜掺杂的CdSe量子点薄膜

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摘要

Copper doped CdSe quantum dots (QDs) and larger nanocrystals were deposited by chemical solution deposition at two different temperatures (5deg C and 80deg C) and their morphological, optical and surface properties compared with similarly deposited undoped CdSe. Crystal sizes and structure were investigated by X-ray diffraction and transmission electron microscopy. All the samples exhibited cubic (sphalerite) structure except for the 80deg C Cu-doped ones which were substantially hexagonal (wurtzite). For the 5deg C samples, the crystal sizes were similar for the doped and undoped samples (ca. 3.4 nm). For the 80deg C samples, the crystal size of the doped CdSe was much larger (84 nm) than the undoped one (6.3 nm) and extensive twinning occurred. Optical measurements on the doped samples showed the presence of surface states due to the copper seen as an increase in absorbance in the long wavelength region. Xray photoemission spectroscopy similarly showed tails in the valence band spectra of the doped samples. These tails were dominant in the 5deg C samples and less so for the 80 deg C onex. XPS also showed that the Cu was present predominantly in the univalent state. The copper was found to be located on the QD surface for the 2-3 nm QDs and distributed both on the surface and in the bulk (or at twin boundaries) for the larger nanoparticles.
机译：铜掺杂的CdSe量子点（QDs）和较大的纳米晶体是通过化学溶液沉积在两个不同的温度（5℃和80℃）下沉积的，与类似沉积的未掺杂CdSe相比，它们的形貌，光学和表面性质均得到了沉积。通过X射线衍射和透射电子显微镜研究晶体的尺寸和结构。除了80℃的Cu掺杂样品基本上为六方晶（纤锌矿）外，所有样品均显示立方晶（方铅矿）结构。对于5℃的样品，掺杂和未掺杂样品的晶体尺寸相似（约3.4 nm）。对于80°C的样品，掺杂的CdSe的晶体尺寸（84 nm）比未掺杂的CdSe的晶体尺寸（6.3 nm）大得多，并且发生了广泛的孪晶。对掺杂样品的光学测量表明，由于铜的存在，表面状态的存在被视为长波长区域中吸光度的增加。 X射线光发射光谱法类似地显示了掺杂样品的价带光谱中的尾部。这些尾巴在5℃样品中占主导地位，而在80℃onex中则较少。 XPS还显示，Cu主要以单价状态存在。发现铜位于2-3 nm QD的QD表面上，并分布在较大的纳米粒子的表面和主体中（或在双边界处）。

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