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Electro-polymerization in porous silicon films

机译:多孔硅膜中的电聚合

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摘要

Luminescent porous silicon films were created by electrochemical anodization of n-type substrate under light illumination. Semi-transparent conducting polypyrrole films were deposited by electrochemical polymerization at a low current density. The SEM micrographs showed that the polymer film impregnates into the wide vertical pores of 1-5 #mu#m and grows sideways suggesting strong current distribution on the walls. The AFM images of polymer surface reveal nanometer size polymer aggregates on the porous layer. The impregnation of the polymer film due to sideways growth provides a useful mean to fabricate stable contact for light emitting diodes from porous silicon.
机译:通过在光照下对n型衬底进行电化学阳极氧化处理,可以制造出发光的多孔硅膜。通过电化学聚合在低电流密度下沉积半透明导电聚吡咯膜。扫描电镜显微照片表明,聚合物薄膜浸渗到1-5#μm的宽垂直孔中并向侧面生长,表明在壁上有很强的电流分布。聚合物表面的AFM图像显示出纳米尺寸的聚合物在多孔层上聚集。由于侧向生长而对聚合物膜的浸渍提供了有用的手段,以由多孔硅制造用于发光二极管的稳定接触。

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