• 主题
高级搜索  >
历史搜索 清空历史
首页> 外文会议>Symposium on Microcrystalline and Nanocrystalline Semiconductors-1998 held November 30-December 3, 1998, Boston, Massachusetts, U.S.A. >In situ studies of the vibrational and electronic properties of Si nanoparticles
【24h】

In situ studies of the vibrational and electronic properties of Si nanoparticles

机译：硅纳米粒子的振动和电子性质的原位研究

获取原文
获取原文并翻译 | 示例
页面导航
  • 摘要
  • 著录项
  • 相似文献
  • 相关主题

摘要

We report on in situ studies of the vibrational properties of ultra-thin Si layers grown by dc magnetron sputtering in ultrahigh vacuum on amorphous MgO and Ag buffer layers. The average thickness of the Si layers ranged from monolayer coverage up to 200 A. The interference enhanced Raman scattering techniques has been used to study changes in the phonon spectra of Si nanoparticles during the crystallization process. Marked size-dependencies in the phonon density of states of the Si quantum dots and the relaxation of the k-vectot conservation condition with decrease in size of the Si nanoparticles have been detected. Electron energy loss spectra have been collected for amorphous and crystallized Si nanoparticles on SiO_2 buffer layers and the difference in the onset of the electronic transitions have been found.
机译：我们报告了在超高真空下对非晶MgO和Ag缓冲层的直流磁控溅射生长的超薄Si层的振动特性的原位研究。 Si层的平均厚度范围从单层覆盖到200A。干涉增强拉曼散射技术已被用于研究结晶过程中Si纳米粒子声子谱的变化。已经检测到Si量子点的状态的声子密度的明显的尺寸依赖性以及随着Si纳米颗粒的尺寸减小的k-vectot保守条件的松弛。收集了SiO_2缓冲层上非晶和结晶的Si纳米粒子的电子能量损失谱，并发现了电子跃迁开始时的差异。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱：kefu@zhangqiaokeyan.com

京公网安备：11010802029741号 ICP备案号：京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有

  • 客服微信

  • 服务号