首页> 外文会议>Symposium on Microcrystalline and Nanocrystalline Semiconductors-1998 held November 30-December 3, 1998, Boston, Massachusetts, U.S.A. >Production of silicon nanocrystals by thermal annealing of silicon-oxygen and silicon-oxygen-carbon alloys: model systems for chemical and structural relaxation at Si-SiO_2 and SiC-SiO_2 interfaces
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Production of silicon nanocrystals by thermal annealing of silicon-oxygen and silicon-oxygen-carbon alloys: model systems for chemical and structural relaxation at Si-SiO_2 and SiC-SiO_2 interfaces

机译:通过硅-氧和硅-氧-碳合金的热退火生产硅纳米晶体:Si-SiO_2和SiC-SiO_2界面化学和结构弛豫的模型系统

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摘要

This paper discusses the formation of silicon nanocrystals, nc-Si, by thermal annealing of hydrogenated amorphous thin films of SiO_x, x<2 and (Si,C)O_x, x<2. Comparisons are made with SiC_x films, providing additional insights into pathways for generation of nc-Si. These alloys are used as model systems for understanding chemical and structural relaxations occurring at Si-SiO_2 and SiC-SiO_2 interfaces during post-oxidation thermal annealing. This then provides important information for optimized processing of Si-SiO_2 and SiC-SiO_2 interfaces for device applications.
机译:本文讨论了通过对SiO_x,x <2和(Si,C)O_x,x <2的氢化非晶薄膜进行热退火来形成硅纳米晶体nc-Si。与SiC_x薄膜进行了比较,从而提供了更多有关nc-Si生成途径的见解。这些合金用作模型系统,以了解在后氧化热退火过程中在Si-SiO_2和SiC-SiO_2界面处发生的化学和结构弛豫。然后,这为为设备应用优化Si-SiO_2和SiC-SiO_2界面的处理提供了重要信息。

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