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首页> 外文会议>Symposium on Multicomponent Oxide Films for Electronics held April 6-8,1999,San francisco,California,U.S.A. >Electrical noise in ultra thin giant magnetoresistors
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Electrical noise in ultra thin giant magnetoresistors

机译：超薄巨型磁阻中的电气噪声

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摘要

We report measurements of low frequency 1/f excess noise for the series of La_0.75Sr_0.25MnO_3 (LSMO) giant magnetoresistive thin eptiaxial films with thickness of 42, 50, 100 and 600 A. Fabricated manganite films experience semiconductor-normal metal (paramagnetic-ferromagnetic) phase transition with the temperature change. The transition manifests itself by the sharp change of resistivity and characteristic peak of magnetoresistivity. thickness decrease results in lowering the transition temperature and increasing of resistivity. The noise spectra has 1/f~ alpha behavior with alpha approx approx 1+-0.2. The voltage fluctuations spectral density shows quadratic dependence on current indicating that obswerved noise is caused by the resistance fluctuations. noise level, temperature coefficient of resistivity and magnetoresistance increase for thin films. There fore, the operation point (transition temperature) can be tailored from 330 K to 220 K by changing only the film thickness while the performance of temperature and magnetic field LSMO sensors can be maintained almost constant in thickness range down to 100 A.
机译：我们报告了一系列La_0.75Sr_0.25MnO_3（LSMO）巨型磁阻薄外延薄膜的低频1 / f过量噪声的测量，厚度为42、50、100和600A。 （铁磁）相变随温度变化。该转变通过电阻率和磁阻特性峰的急剧变化而表现出来。厚度减小导致降低转变温度并增加电阻率。噪声频谱具有1 / f〜alpha行为，alpha大约为1 + -0.2。电压波动频谱密度显示出对电流的二次依赖关系，这表明电阻波动引起了模糊的噪声。薄膜的噪声水平，电阻率温度系数和磁阻增加。因此，仅改变膜厚即可将工作点（转变温度）从330 K调整为220 K，而温度和磁场LSMO传感器的性能在低至100 A的厚度范围内几乎可以保持恒定。

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