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首页> 外文会议>Symposium on Multicomponent Oxide Films for Electronics held April 6-8,1999,San francisco,California,U.S.A. >Doping and oxidation effects in raman spectra of manganites
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Doping and oxidation effects in raman spectra of manganites

机译：锰拉曼光谱中的掺杂和氧化效应

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摘要

Raman scattering from La_yR_xMnO_3- delta compounds (single crystals, ceramics, films) was studied as a function of kind (R) and amount (x) of dopant as well as of oxygen deficit ( delta ). For x= 0.1 to 0.55, a nearly linear Raman shift of the A_g mode from 240 to 125 cm~-1 was observed in Sr-doped compounds. While the intensity of disorder-induced Raman bands was found to be sensitive to the oxygen content, the symmetry allowed related Raman modes exhibit the changes int he frequency. As an indication of deposition conditions, lowering of a symmetry of the film structures with respect to single crystals and ceramics was detected. We discuss the physical nature of the observed effects and show how Raman data can be used for the optical characterization of manganite samples.
机译：研究了La_yR_xMnO_3-化合物（单晶，陶瓷，薄膜）的拉曼散射，其与掺杂剂的种类（R）和量（x）以及氧亏缺（delta）有关。对于x ＝ 0.1至0.55，在掺Sr的化合物中观察到了A_g模式从240至125cm -1的近线性拉曼位移。虽然发现无序诱导的拉曼谱带的强度对氧含量敏感，但对称性允许相关的拉曼模式表现出频率的变化。作为沉积条件的指示，检测到膜结构相对于单晶和陶瓷的对称性降低。我们讨论了所观察到的效应的物理性质，并展示了如何将拉曼数据用于锰矿样品的光学表征。

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