Metal-organic chemical vapor deposition of metal oxides: from precursor synthesis of thin films

机译：金属氧化物的金属有机化学气相沉积：来自薄膜的前体合成

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This contribution describes the synthesis, characterization, and implementation of new lanthanide and main group metal-organic chemcial vapor deposition precursors based on the 2,2-dimethyl1-5-N-2-methoxyethylimino-3-hexanonato ligand system. The new homoleptic, fluorine-free.low melting, and highly volatile complexes are ideally suited for oxide MOCVD, and in many applications are superior to standard beta -diketonates while maintaining ease of synthesis and low cost. This is explicitly demonstrated by the growth of high quality CeO_2/YBa_2Cu_3O_7- delta multilayers.

机译：该贡献描述了基于2,2-二甲基1-5-N-2-甲氧基乙基亚氨基-3-己酮基配体系统的新型镧系元素和主族金属-有机化学气相沉积前体的合成，表征和实施。新型均相，无氟，低熔点和高挥发性的络合物非常适合氧化物MOCVD，在许多应用中均优于标准的β-二酮酸酯，同时保持了合成的简便性和低成本。高质量CeO_2 / YBa_2Cu_3O_7-δ多层膜的生长清楚地证明了这一点。

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《Symposium on Multicomponent Oxide Films for Electronics held April 6-8,1999,San francisco,California,U.S.A.》|1999年|p.37-43|共7页
会议地点 San Francisco CA(US)
作者
J.A.Belot; A.Wang; N.L.Edleman; J.R.Babcock; M.V.Metz; T.J.Marks; P.R.Markworth; R.P.H.Chang;
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中图分类无线电电子学、电信技术;
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4. Metal-organic chemical vapor deposition of metal oxides: from precursor synthesis to thin films [C] . J. A. Belot, A. Wang, N. L. Edleman, Symposium on multicomponent oxide films for electronics . 1999

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Metal-organic chemical vapor deposition of metal oxides: from precursor synthesis of thin films

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