首页> 外文会议>Symposium on Nanophase and Nanocomposite Materials III held November 29-December 2, 1999, Boston, Massachusetts, U.S.A. >Synthesis of single crystal bismuth-telluride and lead-telluride nanowires for new thermoelectric materials
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Synthesis of single crystal bismuth-telluride and lead-telluride nanowires for new thermoelectric materials

机译:用于新型热电材料的单晶碲化铋和碲化铅纳米线的合成

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Dimensionality can play an important role in determining the properties of materials. In the case of thermoelectric materials, it has been proposed that one-dimensional quantum wires, or nanowires, and two-dimensional superlattices could exhibit substantially higher efficiencies compared to the corresponding bulk, three-dimensional solids. To explore such predictions we have initiated a program directed towards the controlled growth of nanowires, and herein, we report the synthesis of single crystal Bi_2Te_3 and PbTe nanowires by a pulsed laser ablation method. Scanning electron microscopy (SEM) and transmission electron microscopy (TEM) show that Bi_2Te_3 wires 80 nm to 200 nm in diameter and lengths exceeding 10 microns, and PbTe wires 25 nm to 60 nm in diameter and lengths to 2 microns can be readily produced by the laser ablation method. High-resolution TEM and electron diffraction show that Bi_2Te_3 nanowires are single crystals with wire axes along the <110> crystal direction. TEM and electron diffraction measurements also show that the PbTe nanowires are single crystals with a <100> growth axis. The transport properties of these new nanowire materials will be discussed.
机译:尺寸可以在确定材料的特性中起重要作用。在热电材料的情况下,已经提出一维量子线或纳米线以及二维超晶格与相应的整体三维固体相比可以表现出更高的效率。为了探索这样的预测,我们启动了针对纳米线受控生长的程序,在这里,我们报道了通过脉冲激光烧蚀方法合成单晶Bi_2Te_3和PbTe纳米线。扫描电子显微镜(SEM)和透射电子显微镜(TEM)表明,通过以下方法可以容易地制备直径为80nm至200nm且长度超过10微米的Bi_2Te_3线和直径为25nm至60nm且长度为2微米的PbTe线。激光烧蚀法。高分辨率TEM和电子衍射表明,Bi_2Te_3纳米线是单晶,其线轴沿<110>晶体方向。 TEM和电子衍射测量还表明,PbTe纳米线是具有<100>生长轴的单晶。将讨论这些新的纳米线材料的传输特性。

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