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Colossal hopping magnetoresistance of GaAs/ErAs nanocomposites

机译:GaAs / ErAs纳米复合材料的巨大跳跃磁阻

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摘要

A theory of bound magnetic polaron (BMP) hopping, driven by thermodynamic fluctuations of the local magnetization, has been deveoloped. It is based on a two-site model of BMP's. The BMP hopping probability rate was calculated in the framework of the "Golden Rule" approach by using the Ginzburg-Landau effective Hamiltonian method. The theory explains the main features of hopping resistivity observed in a variety of experiments in dilute magnetic semiconductors and magnetic nanocomposites, namely: (a) negative giant magnetoresistance, the scale of which is governed by a magnetic polaron localization volume, and (b) low magnetic field positive magnetoresistance, which usually preceeds negative magnetoresistance.
机译:由局部磁化的热力学波动驱动的束缚磁极化子(BMP)跳变理论已得到发展。它基于BMP的两个站点模型。使用金茨堡-兰道有效哈密顿方法在“黄金法则”方法的框架内计算BMP跳变概率率。该理论解释了在稀磁半导体和磁性纳米复合材料的各种实验中观察到的跳变电阻率的主要特征,即:(a)负巨磁电阻,其规模由磁极化子的局部体积控制,和(b)低磁场为正磁阻,通常先于负磁阻。

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