• 主题
高级搜索  >
历史搜索 清空历史
首页> 外文会议>Symposium on Nanophase and Nanocomposite Materials III held November 29-December 2, 1999, Boston, Massachusetts, U.S.A. >ARC discharge for the synthesis of monoclinic Ga_2O_3 nanowires
【24h】

ARC discharge for the synthesis of monoclinic Ga_2O_3 nanowires

机译：ARC放电用于单斜Ga_2O_3纳米线的合成

获取原文
获取原文并翻译 | 示例
页面导航
  • 摘要
  • 著录项
  • 相似文献
  • 相关主题

摘要

Monoclinic gallium oxide ( beta -Ga_2O_3) nanowires were catalytically synthesized by electric arc discharge of GaN powders mixed with a small amount (less than 5 percent) of transition metals under a pressure of 500 Torr (80 percent-Ar + 20 percent-O_2). Scanning electron microscopy (SEM) and high-resolution transmission electron microscopy (HRTEM) images showed that the average diameter of the wires were about 30 nm and their lengths were as long as up to one hundred micrometer, resulting in extremely large aspect ratio. Fourier diffractogram was indicative of single crystalline mature of the beta -Ga_2O_3 wire. HRTEM image also showed beta -Ga_2O_3 with twin defects at the center of the wire which might play as nucleation seeds. Both X-ray diffraction (XRD) patterns and FT-Raman spectra of the wires identified the observed nanowires as monoclinic crystalline gallium oxides.
机译：通过在500托（80％的Ar + 20％的O_2）压力下混合少量（小于5％）过渡金属的GaN粉末的电弧放电催化合成单斜氧化镓（β-Ga_2O_3）纳米线。 。扫描电子显微镜（SEM）和高分辨率透射电子显微镜（HRTEM）图像显示，导线的平均直径约为30 nm，其长度长达100微米，因此长宽比非常大。傅里叶衍射图表示β-Ga_2O_3线的单晶成熟。 HRTEM图像还显示，β-Ga_2O_3在金属丝的中心具有双缺陷，可能充当成核种子。导线的X射线衍射（XRD）图谱和FT-拉曼光谱均将观察到的纳米线识别为单斜晶系晶体氧化镓。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱：kefu@zhangqiaokeyan.com

京公网安备：11010802029741号 ICP备案号：京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有

  • 客服微信

  • 服务号