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首页> 外文会议>Symposium on New Applications for Wide-Bandgap Semiconductors; 20030422-20030424; San Francisco,CA; US >The Refractive Index and Other Properties of Doped ZnO films
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The Refractive Index and Other Properties of Doped ZnO films

机译：掺杂ZnO薄膜的折射率及其他性能

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摘要

Ordinary and extraordinary indices of refraction, film thickness and waveguide mode information of zinc oxide, zinc oxide doped with nitrogen and zinc oxide doped with tellurium were measured by using a prism coupling waveguide technique. The films were grown on c-axis sapphire substrates by pulsed laser deposition (PLD). High accuracy waveguide measurements show that the ordinary and extraordinary indices of refraction of ZnO samples change with the introduction of nitrogen or tellurium. The densification of films with annealing could also be tracked with precision refractive index measurement. The crystal structure and the optical properties of the films were also characterized by using x-ray diffraction (XRD), transmission electron microscopy (TEM), atomic force microscopy (AFM) and cathodoluminescence (CL).
机译：使用棱镜耦合波导技术测量了氧化锌，掺杂氮的氧化锌和掺杂碲的氧化锌的寻常和非常折射率，膜厚度和波导模式信息。薄膜通过脉冲激光沉积（PLD）在c轴蓝宝石衬底上生长。高精度波导测量结果表明，ZnO样品的寻常折射率和非寻常折射率随氮或碲的引入而变化。退火后薄膜的致密化也可以通过精密折射率测量进行跟踪。薄膜的晶体结构和光学性能还通过X射线衍射（XRD），透射电子显微镜（TEM），原子力显微镜（AFM）和阴极发光（CL）表征。

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