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首页> 外文会议>Symposium on New Applications for Wide-Bandgap Semiconductors; 20030422-20030424; San Francisco,CA; US >Low ohmic contact resistance of GaN by employing XeCl excimer laser
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Low ohmic contact resistance of GaN by employing XeCl excimer laser

机译：使用XeCl准分子激光器实现GaN的低欧姆接触电阻

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摘要

We have investigated a new method by which selective high doping concentration of GaN can be obtained using XeCl excimer laser and presented low ohmic contact resistance fabricated by the proposed method. We have irradiated silicon film deposited by sputtering on GaN using XeCl excimer laser and formed ohmic contact on the region irradiated by laser. Ohmic contact resistance by laser doping process was effectively reduced to 0.27 ohm-mm while 0.66 ohm-mm was measured in ohmic contact by conventional method. We have verified that silicon is diffused into GaN by high laser energy during laser irradiation through SMS analysis and ohmic contact resistance is reduced due to increase of doping concentration under ohmic contact region.
机译：我们已经研究了一种新的方法，通过该方法，可以使用XeCl准分子激光器获得选择性的高掺杂浓度的GaN，并提出了通过该方法制造的低欧姆接触电阻。我们已经使用XeCl准分子激光辐照了通过溅射在GaN上沉积的硅膜，并在激光辐照的区域上形成了欧姆接触。通过激光掺杂工艺将欧姆接触电阻有效地减小到0.27 ohm-mm，而通过常规方法在欧姆接触中测得的电阻值为0.66 ohm-mm。我们已经证实，在通过SMS分析进行激光辐照期间，硅会被高激光能量扩散到GaN中，并且由于在欧姆接触区域下掺杂浓度的增加，欧姆接触电阻会降低。

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