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首页> 外文会议>Symposium on New Applications for Wide-Bandgap Semiconductors; 20030422-20030424; San Francisco,CA; US >Large Area 6H- and 4H-SiC Photoconductive Switches
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Large Area 6H- and 4H-SiC Photoconductive Switches

机译：大面积6H和4H-SiC光电导开关

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Photoconductive Semiconductor Switches (PCSS) were fabricated in planar structures on high resistivity 4H-SiC and conductive 6H-SiC and tested at DC Bias voltages up to 1000 V. The gap spacing between the electrodes is 1 mm. The average on-state resistance and the ratio of on-state to off-state currents were about 20 Ω and 3x10~(11) for 4H-SiC, and 60 Ω and 6.6x10~3 for 6H-SiC, respectively. The typical maximum switch current at 1000 V is about 49 A for 4H-SiC. Photoconductivity pulse widths for all applied voltages were 8-10 ns. The observed performance is due in part to the removal of the surface damage by high temperature H_2 etching and surface preparation. Atomic Force Microscopy (AFM) images revealed that very good surface morphology, atomic layer flatness and large step widths were achieved with this surface treatment and these atomically smooth surfaces likely contributed to the excellent switching performance of these devices.
机译：在高电阻4H-SiC和导电6H-SiC上以平面结构制造光电导半导体开关（PCSS），并在高达1000 V的直流偏置电压下进行测试。电极之间的间隙间距为1 mm。 4H-SiC的平均导通电阻和导通状态电流与截止状态之比分别约为20Ω和3x10〜（11），6H-SiC分别为60Ω和6.6x10〜3。对于4H-SiC，1000 V时的典型最大开关电流约为49A。所有施加电压的光电导脉冲宽度为8-10 ns。观察到的性能部分归因于通过高温H_2蚀刻和表面处理消除了表面损伤。原子力显微镜（AFM）图像显示，通过这种表面处理，可以获得非常好的表面形态，原子层平坦度和较大的步长，这些原子光滑的表面可能为这些器件的出色开关性能做出了贡献。

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