Barrier material improvement in AlGaN/GaN microwave transistors under gamma irradiation treatment

机译：γ辐照处理下AlGaN / GaN微波晶体管的势垒材料改进

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Effect of small dose gamma-irradiation on electrical characteristics of AlGaN/GaN high electron mobility transistors has been investigated. Decreasing of the leakage current and its noise has been registered after dose of 1x10~6 Rad. As-grown heterostructures used in further for the device fabrication have been examined after the same radiation treatment. The small dose radiation results are explained within a model that takes into account relaxation of elastic strains and structural-impurity ordering occurring in the barrier layer under irradiation.

机译：研究了小剂量伽马射线辐照对AlGaN / GaN高电子迁移率晶体管电学特性的影响。剂量为1x10〜6 Rad时，记录到泄漏电流及其噪声的降低。在相同的辐射处理之后，已经检查了进一步用于器件制造的生长异质结构。小剂量辐射结果在模型中进行了解释，该模型考虑了弹性应变的松弛和在辐射下在阻挡层中发生的结构杂质排序。

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来源
《Symposium on New Applications for Wide-Bandgap Semiconductors; 20030422-20030424; San Francisco,CA; US》|2003年|P.183-188|共6页
会议地点 San Francisco CA(US);San Francisco CA(US)
作者
S.A.Vitusevich; M.V.Petrychuk; N. Klein; S.V.Danylyuk; A.E.Belyaev; R.V.Konakova; A. Yu. Avksentyev; A.M.Kurakin; P.M.Lytvyn; B.A.Danilchenko; V. Tilak; J. Smart; A. Vertiatchikh; L.F. Eastman;
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Forschungszentrum Juelich, ISG, Juelich 52425, Germany;

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正文语种 eng
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1. Influence of the Parameters of Schottky Barriers of AlGaN/GaN/SiC HEMT Transistors on the Phase Noise of Microwave Generators [J] . V. V. Gruzdov, K. L. Enisherlova, Y. V. Kolkovsky, Russian Microelectronics . 2018,第7期

机译：Algan / GaN / SiC HEMT晶体管肖特基屏障参数对微波发电机相位噪声的影响
2. Gamma irradiation impact on electronic carrier transport in AlGaN/GaN high electron mobility transistors [J] . Schwarz C., Yadav A., Shatkhin M., Applied Physics Letters . 2013,第6期

机译：γ辐照对AlGaN / GaN高电子迁移率晶体管中电子载流子传输的影响
3. Barrier Strain and Carbon Incorporation-Engineered Performance Improvements for AlGaN/GaN High Electron Mobility Transistors [J] . Tien Tung Luong, Ho Yen Teng, Binh Tinh Tran, Chemical vapor deposition: CVD . 2015,第1a3期

机译：AlGaN / GaN高电子迁移率晶体管的势垒应变和碳掺入工程性能改进
4. Brarrier material improvement in AlGaN/GaN microwave transistors under gamma irradiation treatment [C] . S. A. Vitusevich, M. V. Petrychuk, N. klein, Materials Research Society . 2003

机译：γ辐照处理下AlGaN / GaN微波晶体管的布尔载体材料改进
5. The Effects of Thermal, Strain, and Neutron Irradiation on Defect Formation in AlGaN/GaN High Electron Mobility Transistors and GaN Schottky Diodes [D] . Lin, Chung-Han 2013

机译：热，应变和中子辐照对AlGaN / GaN高电子迁移率晶体管和GaN肖特基二极管中缺陷形成的影响
6. An Improved Large Signal Model for 0.1 μm AlGaN/GaN High Electron Mobility Transistors (HEMTs) Process and Its Applications in Practical Monolithic Microwave Integrated Circuit (MMIC) Design in W band [O] . Junfeng Li, Shuman Mao, Yuehang Xu, 2018

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7. Gamma irradiation impact on electronic carrier transport in AlGaN/GaN high electron mobility transistors [O] . C. Schwarz, A. Yadav, M. Shatkhin, 2013

机译：伽马辐射对AlGaN / GaN高电子迁移率晶体管中的电子载体运输的影响
8. Wideband Transferred-Substrate AlGaN-GaN Heterojunction Bipolar Transistors for Microwave Power Applications [R] . Mishra, U. K. , McCarthy, L. 2001

机译：用于微波功率应用的宽带转移衬底alGaN-GaN异质结双极晶体管

Barrier material improvement in AlGaN/GaN microwave transistors under gamma irradiation treatment

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