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首页> 外文会议>Symposium on New Applications for Wide-Bandgap Semiconductors; 20030422-20030424; San Francisco,CA; US >Time of flight of drifting electrons and holes in stabilized a-Se film
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Time of flight of drifting electrons and holes in stabilized a-Se film

机译：稳定a-Se膜中漂移电子和空穴的飞行时间

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摘要

Large area, flat panel detectors are being investigated for digital radiogrpahy and fluoroscopy. Theses detectors employ an x-ray conversion layer of photoconductor to detect x-rays. The amorphous selenium layer that is currently being studied for its use as an x-ray photoconductor is not pure a-Se but rather a-Se doped with 0.2-0.5% As and 10-30 ppm Cl, also known as stabilized a-Se. The suitability of the stabilized a-Se is largely determined by its charge on generating, transporting and trapping properties. In this paper, a conventional time-of-flight measurement was carried out to analyze the transport properties of charge carriers. A laser beam with pulse duration of 5 ns and wavelength of 350 nm was illuminated on the surface of the stabilized a-Se with thickness of 400 μm. The photo response signals of the hole and electron were measured at the applied electric field of 10 V/μm as a function of time. The measured transit times of the hole and electron were about 229.17μs and about 8.73μs at 10 V/μm, respectively. The measured mobility indicated a slight dependence with respect to the applied electric field with a range of 4-10 V/μm. The experimental results showed that the measured mobility of the hole and electron was 0.04584 cm~2V~(-1)s~(-1) and 0.00174 cm~2V~(-1)s~(-1) at the electric field of 10 V/μm.
机译：正在研究大面积平板探测器的数字放射线和荧光透视。这些检测器采用光电导体的X射线转换层来检测X射线。目前正在研究用作X射线光电导体的非晶硒层不是纯a-Se，而是掺杂有0.2-0.5％As和10-30 ppm Cl的a-Se，也称为稳定a-Se 。稳定的a-Se的适用性在很大程度上取决于其对生成，运输和捕获性能的影响。在本文中，进行了常规的飞行时间测量以分析电荷载流子的传输特性。在厚度为400μm的稳定化的a-Se的表面上照射具有5ns的脉冲持续时间和350nm的波长的激光束。空穴和电子的光响应信号是在10 V /μm的施加电场下随时间测量的。在10 V /μm下，测得的空穴和电子的渡越时间分别约为229.17μs和8.73μs。测得的迁移率表明相对于施加的电场略有依赖性，范围为4-10 V /μm。实验结果表明，在电场作用下，空穴和电子的迁移率分别为0.04584 cm〜2V〜（-1）s〜（-1）和0.00174 cm〜2V〜（-1）s〜（-1）。 10 V /微米

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