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首页> 外文会议>Symposium on New Applications for Wide-Bandgap Semiconductors; 20030422-20030424; San Francisco,CA; US >High-Speed Solar-Blind AlGaN Schottky Photodiodes
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High-Speed Solar-Blind AlGaN Schottky Photodiodes

机译：高速太阳能盲AlGaN肖特基光电二极管

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摘要

We report high-speed solar-blind AlGaN-based Schottky photodiodes. AlGaN/GaN heterostructure device layers were grown on sapphire substrate. The devices were fabricated on AlGaN/GaN heterostructuresusing a microwave compatible fabrication process. Schottky photodiodes with Au and indium-tin-oxide (ITO) Schottky contacts were fabricated. Current-voltage, spectral responsivity, and high-speed measurements were performed. Both Schottky samples exhibited very low sub-pA dark currents at high reverse bias. A bias dependent spectral responsivity was observed with a peak responsivity of 89 mA/W at 267 nm, and 44 mA/W at 263 nm for Au and ITO-Schottky devices respectively. Time-based high-frequency measurements at 267 nm resulted in pulse responses with rise times and pulse-widths as short as 13 ps and 74 ps respectively. The fastest solar-blind detector had a record 3-dB bandwidth of 1.10 GHz.
机译：我们报告了基于AlGaN的高速太阳盲肖特基光电二极管。在蓝宝石衬底上生长AlGaN / GaN异质结构器件层。使用微波兼容制造工艺在AlGaN / GaN异质结构上制造器件。制作了具有Au和铟锡氧化物（ITO）的肖特基光电二极管。进行了电流-电压，光谱响应度和高速测量。两个肖特基样品在高反向偏置下均表现出非常低的亚pA暗电流。对于金和ITO-肖特基器件，观察到与偏压有关的光谱响应，在267 nm处的峰值响应为89 mA / W，在263 nm处的峰值响应为44 mA / W。 267 nm处基于时间的高频测量导致脉冲响应的上升时间和脉冲宽度分别短至13 ps和74 ps。最快的太阳盲检测器具有创纪录的1.10 GHz 3-dB带宽。

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