Modeling of Thermal Conductivity of Polycrystalline GaN Films

机译：多晶GaN薄膜导热系数的建模

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We present preliminary results of a theoretical investigation of the thermal conductivity of polycrystalline GaN films. It is assumed that grain boundaries play a major role in limiting the thermal conductivity, which is calculated using the phonon-hopping transport approach. The effect of the grain size, size dispersion, and inter-grain interface structure on the thermal conductivity values is analyzed. The obtained results are compared with available experimental data for polycrystalline films and model predictions for crystalline GaN films.

机译：我们提出了对多晶GaN膜的导热性进行理论研究的初步结果。假定晶界在限制热导率中起主要作用，这是使用声子跳跃传输方法计算得出的。分析了晶粒尺寸，尺寸分散和晶粒间界面结构对热导率值的影响。将获得的结果与多晶膜的可用实验数据和结晶GaN膜的模型预测进行比较。

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来源
《Symposium on New Applications for Wide-Bandgap Semiconductors; 20030422-20030424; San Francisco,CA; US》|2003年|P.215-220|共6页
会议地点 San Francisco CA(US);San Francisco CA(US)
作者
D. Kotchetkov; A. A. Balandin;
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Nano-Device Laboratory, Department of Electrical Engineering, University of California -Riverside, Riverside, CA 92521 U.S.A.;

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原文格式 PDF
正文语种 eng
中图分类材料;
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Modeling of Thermal Conductivity of Polycrystalline GaN Films

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